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- Therefore the existing measurement te chniques and interface parameter extraction methods for the MOS capac itor can be directly applied to an SIS capacitor. SIMOX SOI wafers produced by ion implant processes we re used in this experiment. 传统的MOS电容结构测试电学特性应用到SOI圆片是有其局限性的,在本实验中直接利用SOI圆片的SIS(Silicon-Insulator-Silicon)结构,将SOI圆片的无损电学表征方法应用到实际的表征当中去。
- Control of Channel-effect in Ion Implanting Process 离子注入中的沟道效应控制
- ion implant process 离子注入工艺
- The Study on the Rise Time Parameter Design of the Pulse Modulator Suitable for the Omni-Directional Ion Implantation Process 适用于全方位离子注入过程的脉冲调制器上升沿参数设计的研究
- A light-sensitive polymer material removed which is used as a mask etching and ion implant steps. 一种暴露于紫外线光即产生聚合作用之抗蚀感光原料，用于化学蚀刻.
- double ion implanted process 双重离子注入工艺
- Mutagenic Effect of Ion Implanting on Gluconobacter Oxydans[J]. 引用该论文 吕树娟;王军;姚建铭.
- Effects of the Ion Implantation on Castanea mallissime BL[J]. 引用该论文 项艳;刘正祥;胡蕙露;张良富.
- Vertical scanner is the supporting part of a series process ion implanter, which transfer high speed movement from outside of the chamber to the target inside. 垂直扫描机构是单晶片离子注入机靶盘的支撑部件,起着将高速直线运动从靶室外传递到靶盘的作用。
- The process progress for magnesium alloy surface treatment technology include conversion coating, anodizing, micro-arc oxidation, electrochemical plating, ion implantation etc was summarized. 综述了镁合金表面处理技术的工艺进展,主要包括化学转化膜、阳极氧化、微弧氧化、金属涂层、离子注入等技术。
- The application of Freeman ion source linked to LC-2A ion implanter is described in the paper. 本文叙述了弗里曼(Freeman)离子源体联接在LC-2A型中能离子注入机上的应用;
- The experimental results on fabricating the bipolar ECL silicon IC by ion implantation are reported. 本文简要叙述用离子注入法制造双极硅ECL集成电路的实验结果。
- Thc mutagenic effects of Vc strains by low encrgy ion implantation have been studied. 对低能离子注入Vc生产菌的诱变效应进行研究。
- A Rudimental Study on Ion Implanting on Schizosaccharomyces promb Producing CoQ10[J]. 引用该论文 王丽;郑之明;樊永红;苏彩欣;许德军;柳丹;古绍彬;余增亮.
- The distribution of ion implantation dose on the target surface is not uniform, with a peak near the target corner. 注入离子剂量在靶表面的分布不均匀，在边角附近出现峰值；
- M.Farley, B.Simonton, in “Ion Implantation Science and Technology”, Ion Implantation Technology Co.Yorktown 1996. 宋慧娟等编著，人类与自然科学，五南图书出版公司印行，2003/09。
- First, high-current metal ion implantation with the development of a synthesis of metal silicide of new technologies. 首先用强流金属离子注入发展出合成金属硅化物的新技术。
- Implant a pacemaker; implant a drug capsule. 植入一个起搏器; 植入一个药物胶囊
- It is a leap in the process of cognition. 这是认识过程的一次飞跃。
- The codeposition of Mo-Ni by electroplating and ion implantation were used to add molybdenum into coatings. 又采用钼-镍合金电镀和离子注入钼+铬硅共渗的方法， 得到了含钼的铬硅渗层。
