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- deep reaction ion etching technology 深刻蚀技术
- Modeling and simulation of reactive ion etching technology 反应离子刻蚀工艺仿真模型的研究
- MAKE OF Ge FRESNEL MICROLENS ARRAYS USING REACTION ION ETCHING TECHNOLOGY 用反应离子刻蚀技术制作Ge菲涅尔微透镜列阵
- ion etching technology 离子蚀刻技术
- The reactor is capable of working in the RIE (reactive ion etching) mode and also in the plasma etching mode. 反应腔拥有在RIE(反应离子刻蚀)模式和等离子刻蚀模式下工作的能力。
- Yak hairs were treated by the microwave electron cyclotron resonance plasma reactive ion etching (ECR-RIE) equipment to improve its property of weave. 摘要采用微波电子回旋共振等离子体反应离子刻蚀(ECR-RIE)装置对牦牛毛纤维进行表面改性,从而改善牦牛毛的可纺性。
- The experiment of fully automatic reactive ion etching on 3 inch GaAs wafer is described. 介绍了全自动反应离子腐蚀3英寸GaAs片的实验研究工作。
- The arrays were subsequently treated with reactive ion etching (RIE) to slightly reduced the size of the sphere. 制程的开发首先利用黄光微影制作有高低差的沟槽图样,再将单层奈米球排入沟槽之中。
- Reactive ion etching (RIE) process utilized to form giant magnetoresistive (GMR) spin valve sensing elements was investigated experimentally. 对巨磁电阻自旋阀磁场传感器制作中的关键技术之一:自旋阀薄膜的反应离子刻蚀(RIE)工艺,进行了试验研究。
- Yak hairs were treated by the microwave electron cy cl otron resonance plasma reactive ion etching(ECR-RIE) equipment to improve its property of weave. 采用微波电子回旋共振等离子体反应离子刻蚀(ECR-RIE)装置对牦牛毛纤维进行表面改性,从而改善牦牛毛的可纺性。
- In the table below, if a blaze wavelength is indicated, the grating has been optimized for the indicated wavelength and has been blazed by means of ion etching. 下表中标有闪耀波长的光栅为离子刻蚀光栅,在闪耀波长处优化。
- The mechanism of anisotropic etching the construction design of silicon anisotropic etching and two-side etching technology to produce microaccelerometer have been discussed in the paper. 本文讨论了各向异性腐蚀的机理;硅的各向异性腐蚀设计;双面光刻等与微硅加速度计有关的超精细加工问题。
- A two-dimensional (2D) physical model of reactive ion etching (RIE) which includes isotropic and anisotropic components is presented.The physical model is analyzed. 摘要反应离子刻蚀(RIE)的二维物理模型,包括各向同性和各向异性两部分。
- New type of magnetic sensitivity transistor is based on SOI,whose design principle and process are expatiated,and whose recombination region is set by anisotropic etching technology in MEMS. 构成新型磁敏三极管的复合区采用MEMS中的各向异性腐蚀技术进行设置,给出了这种复合区的复合机理。
- The influence of chamber pressure,gas flow rate and RF power on micro loading effect in reactive ion etch of silicon dioxide is researched. 结果表明,通过对反应室压力、刻蚀气体流量和射频功率的调节,可以降低微负载效应的影响,得到良好的刻蚀均匀性。
- Abstract: The characteristics and progress of lithography technique and plasma etching technology are summarized.Their physical mechanisms and current research problems are also explained. 文摘:介绍了光刻与等离子体刻蚀技术的特点与进展,阐述了等离子体刻蚀的物理机制与前沿问题.
- A dry etch technology for poly-silicon using Cl2, SF6 and N2 mixed gas has been developed on Tegal 1512e. Different effects of positive resist mask for LDD and SiO2 mask for SST on the process are discussed. 在Tegal1512e设备上,采用Cl_2、SF_6、N_2混合气体,开发了多晶硅干法腐蚀工艺,讨论了LDD的正胶掩膜及SST的SiO_2掩膜对工艺的不同影响。
- Etching Technology of Refractory Metals Multilayer 多层难熔金属的刻蚀工艺技术研究
- LITHOGRAPHY AND PLASMA ETCHING TECHNOLOGY 光刻与等离子体刻蚀技术
- with no need of etching technology 无刻蚀