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- high k dielectric film 高k栅介质
- High k dielectric HfO 2 films were deposited on p type Si(100) substrates by e beam evaporation. 使用高真空电子束蒸发在p型Si(1 0 0 )衬底上制备了高kHfO2 薄膜 .
- The equivalent oxide thickness (EOT) of an HfO_2 high k dielectric is extracted in two steps. 分两步提取了HfO2高k栅介质等效氧化层厚度(EOT).
- NTBI induced device degradation can be suppressed by a SiN capping layer between Poly-Si gate and high k dielectric layer. 在闸极与高介电常数介电层间使用氮化矽可有效抑制负偏压温度不稳定性的现象。
- Second,an approach using flat-band capacitance is demonstrated for extracting the EOT of a high k dielectric,without the effects of inversion or accumulation capacitance. 其次;给出了一种利用平带电容提取高k介质EOT的方法;该方法能克服量子效应所产生的反型层或积累层电容的影响.
- FSG, as one kind of low k dielectric film, is very similar with SiO2 in structure and deposition, and can be well used in 0.18-0.13um ULSL. 氟掺杂的氧化硅玻璃（FSG）作为低介电常数材料的一种，它的制备工艺、结构和性能更接近二氧化硅，足以满足0.;18微米甚至0
- The synthesis, structure, properties and process interaction of low k dielectrics are reviewed.Characterization techniques for low k dielectric films are summarized. 综述了低介电常数介质薄膜的制备方法、结构与性能表徵、工艺兼容性等领域的最新进展。
- Studies of High k Dielectric Materials on Bulk Si and SOI and Their Applications 体Si和SOI上高k介质材料研究和应用探索
- The Growth and Properties of Tb-doped ZnO Films and High K Dielectric Er_2O_3 Films Tb掺杂ZnO薄膜和高K栅介质Er_2O_3薄膜的制备及特性研究
- high K dielectric 高K介质
- For continued technology scaling, high k materials are required to replace SiO_2 as gate dielectric in the next generation metal oxide field effect transistors (MOSFET). 在过去二十多年里,Si基元器件的大小遵循Moore定律按比例的持续减小。 对于下一代金属氧化物半导体场效应管(MOSFET)器件,原来的栅极介电材料SiO_2已经不再适合使用。
- The mirrors here are coated with a multilayered dielectric film having a reflectance of over 99%. 这儿的反射镜上镀了一层多层介质膜，因而反射比超过99%25。
- The material, utilized as high- k dielectric, contains hafnium, there is no other information about it. 这些材料，利用高k电介质，包含铪，没有任何其他信息。
- A key problem in chip fabrication is that the new polish method for electromigration and ultra-low K dielectric and Cu electroplating level. 电迁移问题和集成超低k电介质材料与Cu镀层的新抛光方法是芯片制造中的一个关键问题。
- Device Processing: Etching. Surface passivation; dielectric films. 元件制程：蚀刻，表面钝化，介电材料薄膜。
- Device Processing : Etching. Surface passivation; dielectric films. 元件制程：蚀刻，表面钝化，介电材料薄膜。
- A method of manufacturing a flash memory device that prevents generation of voids when forming an interlayer dielectric film. 一种制造闪速存储器件的方法，其防止在形成层间介电薄膜时产生空隙。
- high k dielectrics 高介电常数材料
- A coating of the sol material according to the invention can be directly cured (without aging) to obtain a microporous dielectric film without shrinkage or cracks. 依本发明之剂型溶胶溶液进行镀膜，可不经过老化过程直接进行固化，即可得到一无裂痕且具有孔隙之介电膜。
- A high K ratio method for fatigue precracking in welding position toughness specimen of thick steel plate was developed. 提出了预制厚钢板焊缝断裂韧度试样疲劳裂纹的“高K比法”。
