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- heterojunction photocathode 异质结光电阴极
- GeSi/Si Heterojunction Infrared lmage Sensor[J]. 引用该论文 贾正根.
- Photocathode such as water, time Rusuo. 光阴如水,岁月如梭。
- In this book we also discuss nonlasing heterojunction diodes. 本书也讨论了非激光型的异质结发光二极管。
- High Quantum Efficiency GaAs Photocathode by Gradient Doping[J]. 引用该论文 杜晓晴;常本康;邹继军;李敏.
- Calculating the Quantum Yield of NEA Photocathode by Integral[J]. 引用该论文 宗志园;常本康.
- DC-SC photocathode infector for high average po wer FEL[J]. 引用该论文 郝建奎;全胜文;向蓉;朱凤.
- Characteristics of Infrared Photodetector PD24 Based on Heterojunction[J]. 引用该论文 王长缨;何振江;向蔡生.
- Photoelectric Characteristics of SiC1-xGex/SiC Heterojunction Diode[J]. 引用该论文 靳瑞英;陈治明;蒲红斌;隋晓红.
- The Effect of Cs/O Activation Current Ratio on GaAs Photocathode[J]. 引用该论文 邹继军;常本康;杜晓晴;陈怀林;王惠;高频.
- An image of the object is projected by the object lens on to the photocathode of an image converting tube. 物象通过物镜投影在变像管的光阴极上。
- At this time, the field of semiconductor lasers is dominated by heterojunction devices. 目前,在半导体激光器领域中,异质结激光器已占居支配地位。
- An image of the object is projected by the objective lens on to the photocathode of an image convert tube. 物象通过物镜投影在变象管的光阴极上。
- Jiann S. Yuan, SiGe, GaAs, and InP Heterojunction Bipolar Transistors. John Wiley and Sons, Inc. 1999. 辛裕明,“射频及高速元件”,台北市通讯元件教学推动中心,民国96年。
- The SiGe heterojunction metal-oxide-semiconductor light-emitting diodes (MOS LED) were reported in chapter 4. 第四章探讨矽锗异质接面金属-氧化层-半导体(MOS)LED。
- With good light collection, about 30% of the luminescence quanta may reach the photocathode. 在良好的光收集条件下,约30%25的荧光量子可以到达光阴极。
- After that, blue DPVBi emitting materials are deposited obliquely on it to form heterojunction structure. 可是以小分子为偏振发光薄膜的研究较少见于文献中。
- The effect of the tube making Technique on the photoemissive property of the photocathode is described. 主要论述制管工艺对光电阴极发射性能的影响。
- Study on properties of electroluminescence from porous silicon heterojunction device[J]. 引用该论文 杨亚军;李清山;刘宪云.
- The structure model of multialkali photocathode of P-type Na2Ksb+ intrinsic K2CsSb+ intrinsic Cs3 Sb has been proposed. 对多碱光电阴极P型Na_2KSb+本征K_2Cssb+本征Cs_3Sb的结构模型进行了印证; 提出了工艺上应采取的措施。