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- heterojunction CMOSFET 异质结
- GeSi／Si Heterojunction Infrared lmage Sensor[J]. 引用该论文 贾正根.
- In this book we also discuss nonlasing heterojunction diodes. 本书也讨论了非激光型的异质结发光二极管。
- Characteristics of Infrared Photodetector PD24 Based on Heterojunction[J]. 引用该论文 王长缨;何振江;向蔡生.
- Photoelectric Characteristics of SiC1-xGex/SiC Heterojunction Diode[J]. 引用该论文 靳瑞英;陈治明;蒲红斌;隋晓红.
- At this time, the field of semiconductor lasers is dominated by heterojunction devices. 目前，在半导体激光器领域中，异质结激光器已占居支配地位。
- Jiann S. Yuan, SiGe, GaAs, and InP Heterojunction Bipolar Transistors. John Wiley and Sons, Inc. 1999. 辛裕明，“射频及高速元件”，台北市通讯元件教学推动中心，民国96年。
- The SiGe heterojunction metal-oxide-semiconductor light-emitting diodes (MOS LED) were reported in chapter 4. 第四章探讨矽锗异质接面金属-氧化层-半导体(MOS)LED。
- After that, blue DPVBi emitting materials are deposited obliquely on it to form heterojunction structure. 可是以小分子为偏振发光薄膜的研究较少见于文献中。
- Study on properties of electroluminescence from porous silicon heterojunction device[J]. 引用该论文 杨亚军;李清山;刘宪云.
- High Luminescent Brightness and Efficiency Electro luminescent Devices Based on Heterojunction[J]. 引用该论文 谭海曙;姚建铨;陈立春.
- John D. Cressler, Guogu Niu, Silicon-Germanium Heterojunction Bipolar Transistors. Boston, MA:Artech House, 2003. 吴昭羲“平台式矽锗异质接面双载子电晶体研制与分析”硕士论文，国立中央大学，民国94年。
- Optimum Al Composition Analysis on AlGaInP Quaternary Double Heterojunction Light-emitting Diodes[J]. 引用该论文 陈贵楚;范广涵;陈练辉;刘鲁.
- Study on the Reliability of Microcavity Devices Based on LPPP Heterojunction Structure Liao Kejun[J]. 引用该论文 廖克俊;王万录;王蜀霞;孔春阳.
- Efficient thin film CdTe solar cells are of the heterojunction type with cadmium sulfide (CdS) as the heterojunction partner. 高效簿膜CdTe太阳电池是以硫化镉(CdS)作匹配的异质结太阳电池.
- Thin films of TiO2,ZnO,Fe2O3 and heterojunction thin films of ZnO/TiO2 ,Fe2O3/ TiO2 were prepared on quartz glass by dip-coating technique. 采用浸渍提拉法制得TiO_2,ZnO,Fe_2O_2石英玻璃基底负载膜及ZnO/TiO_2,Fe_2O_3/TiO_2异质结膜。
- A simple and practical modeling of the GexSi1-x/Si heterojunction zero-gapdirectional coupler switch (BOA type-Bifurcation Optique Active) is proposed. 提出一种简便可行的GexSi1－x异质结无间距定向耦合光开关（BOA型－BifurcationOpticalActive）模型分析方法。
- This paper reviews the theory of quantized Hall effect of two-dimensional electron gas in GaAs-Al_xGa_(1-x)As heterojunction at low temperature. 本文综述了GaAs-Al_(?) Ga_(1-())As异质结界面内二维电子气在低温下的量子霍耳效应理论。
- In this section we derive a relation between the recombination current in the active layer and the voltage applied to the heterojunction. 在这一节中我们介绍了有关在有源激励层的再复合和异质结的适用电压之间的关系。
- The interface states and valence band offsets of Si/GaAs heterojunction have been studiedby the self-consistent EHT method. 本文报道用自洽EHT方法研究Si/GaAs异质结界面态分布和价带不连续性。
