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- grid bias voltage 栅压
- The full bias voltage appears across RL2. 全部的偏置电压出现在RL2上。
- Different bias voltage for the input buffer transistor. 不同偏置电压的输入缓冲晶体管.
- The transformer isolates the transistors with regard to d-c bias voltage. 变压器可在两个晶体管之间隔离直流偏压。
- One measure of the quality of a diode is its leakage current at a specified reverse bias voltage. 衡量二极管质量的一个方面就是在规定的反向偏置电压下的泄漏电流。
- In the experiment, we found the locking range of OEO was greatly affected by the bias voltage of modulator in the loop. 实验中发现OEO中凋制器的偏置电压对OEO的注入锁定范围有很大影响.
- Meanwhile it is testified that cathode emissive area and grid bias are the most direct effective factors. The experimental results lay a foundation for accommodation of welding every specification material at single emissive area in using EBW welder. 同时验证了阴极发射面积和栅偏压是电子束束斑直径大小最直接的影响因素，该结果为适应电子束焊机在单一发射面积条件下适应各种规格材料的焊接奠定了基础。
- If the bias voltage is less than 42V off ground, the isolated BNC vacuum feedthrough will not need a safety shield. 如果对地的浮地电压小于42V，那么绝缘的BNC接头就不需要安全屏蔽。
- The limiter consists of a superconducting coil, a diode bridge and a bias voltage supply. 桥式超导故障限流器,它由超导磁体、二极管桥路和直流偏压源组成。
- During IGBT is off, the gate should be provided reverse bias voltage for ensuring the safe of IGBT. 在IGBT关断期间，IGBT的栅极需加反向偏置电压，避免IGBT的误动作。
- How to choose the bias voltage, the width and the period of the gated pulse is very important. 偏置电压的大小、门脉冲宽度和周期的选择对后脉冲的消除起着关键的作用。
- The gain of the APD can be controlled by the magnitude of the reverse bias voltage. APD的增益可以由反向偏置电压的幅度来控制。反向偏置电压越大增益就越高。
- Reference [1] concluded that for the phase-locking of Gunn Oscillator, timing by varying the bias voltage on the diode is not a practical method. 以往国内外采用种种锁相方法,而直接控制体效应振荡器偏压的锁相法则被认为是不切实际的方法。
- Source of electron gun grid bias 电子枪栅偏压电源
- The Model 6517A Electrometer applies the bias voltage (VTEST), measures the leakage current, then calculates the resistance of each resistor. 6517A型静电计施加偏置电压（VTEST），并测量漏电流，然后计算出每个电阻器的电阻值。
- The changes of the line spread function(LSF)and modulation transfer function(MTF)of scanner due to the variation of detector bias voltage are analyzed. 通过实验和计算,分析由于探测器偏置电压的不同所产生的线扩展函数(LSF)变化和随之导致的扫描器调制传递函数(MTF)变化。
- The full bias voltage appears across RL2 (the leakage resistance between the inside and outer shields of a triax cable). 在RL2（同轴电缆内、外屏蔽之间的漏阻）上存在满偏置电压。
- The input bias current flows at the instrument input due to internal instrument circuitry and the internal bias voltage. 仪器内部电路和内部的偏移电压会在仪器的输入端引起输入偏置电流。
- A square shape Hall plate was incorporated into the conditioning circuit. The absolute sensitivity of the Hall plate is around 704mV/T at 3V bias voltage. 该电路采用了方形霍尔元件,绝对灵敏度为704mV/T;
- As a result of the computer simulation, the drift curve of hFE with time and the effects of temperature, emitter bias voltage, and base surface potential on the curve are given. 经计算机模拟分析,求得了h_(FE)随时间的漂移曲线以及温度、发射结偏压、基区表面势对这种漂移的影响。
