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- graphio epitaxy 制图 外延法
- Next, the epitaxy substrate is removed. 然后,移除磊晶基板。
- The higher value is comparable to those obtained in CVD epitaxy. 这个高的数值可以和从化学气相淀积外延得到的数值相比拟。
- Sticking Coefficient of As in molecular beam epitaxy of HgCdTe [J]. As在HgCdTe分子束外延中的表面粘附系数.;红外与毫米波学报);
- The environmental morals have their intension , the epitaxy and main content. 环境道德有其内涵、外延和主要内容。
- GaP:N liquid phase epitaxy material photoluminescence light-emitting region. 标 签 GaP:N液相外延材料 光致发光 发光区域。
- Podium was an OEM of epitaxy wafer growth and chip processing for both nationally and internationally renowned electronic manufacturers. 公司成立初期,主要为国内外知名半导体厂商生产外延片及芯片。
- High quality GaN film was grown by hydride vapor phase epitaxy(HVPE) using porous AAO as mask. 采用均匀的多孔阳极氧化铝做掩膜在氢化物气相外延设备中生长出高质量的氮化镓膜。
- GaAs-Al_xGa_(1-x)As heterostructure grown by liquid phase epitaxy (LPE) has beenstudied by Auger electron spectroscope. 采用俄歇电子能谱仪(AES)对液相外延生长的GaAs-AlxGa_(1-x)As异质结构进行了研究.
- The crystal growth by glow discharge sputterings and ion beam sputterings and thecrystal epitaxy are introduced. 介绍了气相中晶体生长的方法,如辉光放电溅射法和离子束溅射沉积法以及晶体外延生长的方法。
- Linguistic context restrains intension and epitaxy of saying " as the backgrounds of "speaking" . 语境作为一种“言说”的知识背景制约着“所说”的内涵与外延。
- I will discuss how Molecular Beam Epitaxy (MBE) was invented, its current status, and future developments. 我将介绍分子束磊晶技术( MBE )的发明经过、现况、和将来的发展。
- Cr3+-Activated YAG Monocrystalline Luminescent Layers Grown by Liquid Phase Epitaxy[J]. 引用该论文 饶海波;成建波;黄宗琳;李军建;方官久.
- The impurity concentration profile depends on epitaxy growth velocity, growth time and impurity diffusion coefficient. 如果杂质的扩散系数很小,杂质在外延层中的深度分布是均匀的。
- In particular, she has pioneered the use of molecular beam epitaxy (MBE) technology in China. 惊诧于这样的人还不是中国的院士,实在很烦。
- Now we look forward to working with the AIXTRON true high temperature capable epitaxy system. 现在他们正期待使用AIXTRON提供的高温外延系统,以期在氮化物研究方面取得巨大进展。
- In this thesis, two topics related to the epitaxy of CoSi2 and its application are studied. 在八英寸Si(100)衬底上利用Co/Si和Co/Ti/Si固相反应分别制备了多晶和外延CoSi2薄膜,通过四探针薄层电阻法(FPP)、X射线衍射(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)等手段,研究了CoSi2薄膜的结构、CoSi2薄膜与硅衬底接触的界面状况、CoSi2薄膜的外延质量、高温稳定性、以及自对准工艺窗口。
- We have grown PbTe films on Si(111) and Si (100) substrates by using Hot Wall Epitaxy (HWE) technology. 我们采用热壁外延(Hot Wall Epitaxy,缩写为HWE)技术,在Si(111)和Si(100)衬底上外延生长PbTe薄膜。
- A new 125mm UHV/CVD SiGe/Si epitaxy equipment SGE500 capable of commercialization is constructed and device-level SiGe HBT material is grown. 研制成功了可商业化的 75mm单片超高真空化学气相淀积锗硅外延设备SGE50 0 ;并生长了器件级SiGeHBT材料 .
- A thin film electroluminescent (EL) cell having Au/ZnSe:Mn/n-Ge structure has been fabricated by molecular beam epitaxy (MBE). 用分子束外延法制成了具有Au/ZnSe:Mn/n-Ge结构的电致发光单晶膜,最低起亮电压为6V。