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- Large Signal matching with LDMOS and GaAs FET is Plus. 想为客户所想，满足特种需求，提供特色服务。
- The device could be integrated monolithically and planarly with GaAs FET. 这种器件可与FET实现平面集成。
- Noise parameters at the C-band and s parameters at the C/S band for WC50 low noise GaAs FET are provided. 给出了国产WC50型低噪声砷化镓场效应晶体管在C波段的噪声参数及在C、S波段的s参数。
- A GaAs FET Oscillator stabilized by a dielectric resonator with a feedback loop has been developed. 本文介绍了一种环路反馈式场效应管介质稳频振荡器.
- GaAs FET Oscillator stabilized by a dielectric resonator with a feedback loop has been developed. 本文介绍了一种环路反馈式场效应管介质稳频振荡器.
- This amplifier comprises two low-noise GaAs FET transistors cx50 B mounted on a metallized dielectric plate placed in an enclosure (100X60X40mm3). 该放大器是由两个低噪声砷化镓场效应晶体管C×50B组成,制作在金属化了的聚四氟乙烯介质板上,并装在一个100×60×40mm~3的盒里。
- The microwave performance of an S band high power GaAs FET for oscillation application produced by Nanjing Electronic Devices Institute is described. 对WC76型S频段大功率振荡用砷化镓场效应晶体管的微波性能作了介绍。
- In this paper, a method is described for simulating a large-signal GaAs FET model by using a static approach, and designing a power amplifier based on the model. 本文叙述了采用静态法模拟GaAs FET大信号模型和以该大信号模型设计宽带GaAsFRT功率放大器的方法.
- Application of Polyimide in Microwave GaAs FET 聚酰亚胺在微波GaAs FET中的应用
- Miciowave Amplifier Using GaAs FET 采用砷化镓场效应晶体管的微波放大器
- CAD of Broad-Band GaAs FET Amplifiers 宽带GaAs FET放大器的计算机辅助设计
- Some Consideratios in Design of High-Power GaAs FET Bias Circuit 偏置电路设计中的有关问题
- Computer-Aided Design of Broad-Band GaAs FET Power Amplifiers 宽带GaAs FET功率放大器的计算机辅助设计
- Advances in Microwave GaAs FET DeviceandCircuit Technologies 微波砷化?功率埸效应管及其电路技术的进展
- GaAs FET Mushroom Gate Fabricated by FIB/EB Hybrid Lithography 用FIB/EB混合光刻加工GaAs FET蘑菇栅
- Design of an X-Band Microstrip GaAs FET VCO with Varactor-Tuning X波段变容管调谐GaAs FET集成VCO的设计
- A GaAs FET Oscillator with a Dielectric Resonator Feedback 介质谐振器反馈型GaAs FET振荡器
- Keywords ultrafast electronic pulse sampling;high-speed transient sampler;picosecond pulse transmission line;schottky diodes sampling gate;GaAs FET; 超快电脉冲取样;高速瞬态取样器;皮秒脉冲传输线;肖特基二极管取样门;砷化镓场效应管;
- Basing on HEMT FET, a mono-stage LNA was designed. 利用HEMT场效应管设计的单级低噪声放大器的噪声系数小于1.;5dB;增益大于11dB。
- Features: trench FET Power MOSFET 100% Rg Tested. 特点:沟道场效应管;功率MOS晶体管.
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