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- forward bias voltage 正向直流偏压
- The full bias voltage appears across RL2. 全部的偏置电压出现在RL2上。
- Different bias voltage for the input buffer transistor. 不同偏置电压的输入缓冲晶体管.
- The transformer isolates the transistors with regard to d-c bias voltage. 变压器可在两个晶体管之间隔离直流偏压。
- The positive-going signal subtracts from the forward bias of the lower transistor. 正向信号则使它的正向偏压减弱。
- One measure of the quality of a diode is its leakage current at a specified reverse bias voltage. 衡量二极管质量的一个方面就是在规定的反向偏置电压下的泄漏电流。
- In the experiment, we found the locking range of OEO was greatly affected by the bias voltage of modulator in the loop. 实验中发现OEO中凋制器的偏置电压对OEO的注入锁定范围有很大影响.
- With sufficient forward bias, the diffusion capacitance can easily exceed the space charge region capacitance. 当正向偏压足够高时，扩散电容很容易超过空间电荷压电容。
- If the bias voltage is less than 42V off ground, the isolated BNC vacuum feedthrough will not need a safety shield. 如果对地的浮地电压小于42V，那么绝缘的BNC接头就不需要安全屏蔽。
- The limiter consists of a superconducting coil, a diode bridge and a bias voltage supply. 桥式超导故障限流器,它由超导磁体、二极管桥路和直流偏压源组成。
- The displacement current mechanism is operative only for capacitors under reverse bias or very weak forward bias conditions which maintain a space-charge layer. 位移电流的机理只对反向偏压或要维持空间电荷层所需要的非常弱的正向偏压条件下的电容器才有用。
- During IGBT is off, the gate should be provided reverse bias voltage for ensuring the safe of IGBT. 在IGBT关断期间，IGBT的栅极需加反向偏置电压，避免IGBT的误动作。
- How to choose the bias voltage, the width and the period of the gated pulse is very important. 偏置电压的大小、门脉冲宽度和周期的选择对后脉冲的消除起着关键的作用。
- The gain of the APD can be controlled by the magnitude of the reverse bias voltage. APD的增益可以由反向偏置电压的幅度来控制。反向偏置电压越大增益就越高。
- The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more. 即使在1mV的正向偏置之下，1N3595的漏电流一般会小于1皮安，此电路不会影响10pA或更大电流的测量。
- Reference [1] concluded that for the phase-locking of Gunn Oscillator, timing by varying the bias voltage on the diode is not a practical method. 以往国内外采用种种锁相方法,而直接控制体效应振荡器偏压的锁相法则被认为是不切实际的方法。
- The Model 6517A Electrometer applies the bias voltage (VTEST), measures the leakage current, then calculates the resistance of each resistor. 6517A型静电计施加偏置电压（VTEST），并测量漏电流，然后计算出每个电阻器的电阻值。
- The changes of the line spread function(LSF)and modulation transfer function(MTF)of scanner due to the variation of detector bias voltage are analyzed. 通过实验和计算,分析由于探测器偏置电压的不同所产生的线扩展函数(LSF)变化和随之导致的扫描器调制传递函数(MTF)变化。
- The full bias voltage appears across RL2 (the leakage resistance between the inside and outer shields of a triax cable). 在RL2（同轴电缆内、外屏蔽之间的漏阻）上存在满偏置电压。
- Based on the thermionic emission theory of the current density of 4H-SiC Schottky barrier diodes under the forward bias, the calculations for the Schottky barrier height ? eff and the specific on-resistance R on are presented. 在分析 4H SiC肖特基势垒二极管正向电流热电子发射理论的基础上 ;计算了肖特基势垒高度?eff和串联电阻Ron.
