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- floating gate mos 浮栅金属氧化物半导体
- Each bit of data in a flash memory device is stored in a transistor called a floating gate. 每一个比特的数据储存在快闪记忆装置称为浮栅晶体管。
- Reading the charges stored on the floating gate of a memory cell is one of the most critical operations in an EEPROM device. 设计者常常要在灵敏放大器的面积、功耗以及读数据的速度之间折衷考虑。
- Groove gate MOS devices 槽栅MOS器件
- By adopting the structure of the invention, the cusps of the floating gate become sharper, thus greatly improving the durability of the floating gate flash memory device. 本发明通过上述结构，使得浮栅的尖角更尖，从而大大的提高了浮栅闪存器件的耐用度。
- floating gate avalanche injection type MOS memory 浮栅雪崩注入MOS存储器
- floating gate avalanche injection mos 浮栅雪崩注入型金属氧化物半导体,浮动栅雪崩注入型金属氧化物半导体
- floating gate avalanche injection MOS memory 浮动栅雪崩注入型MOS存储器
- Then, we show the feasible application of nickel silicide on photo detector and design the so-called photo gate MOS transistor to do further study in the future work. 最后，我将提出矽化镍在光侦测器上的可行性并为了更进一步的研究而设计出所谓的光闸极金氧半电晶体。
- The two-dimensional device simulation software Medici was used to simulate the behaviors of MOS and SOI MOS devices with ZrO2 gate dielectrics, which was compared with those of traditional MOS and SOI MOS devices. 采用二维模拟软件Medici对以ZrO:为栅介质的体硅MOS器件和501 MOS器件的性能进行了模拟。 系统模拟了以ZrO:为栅介质的体硅MOS器件和常规MOS器件性能对比，以及ZrO:为栅介质的501 MOS器件的性能与常规501 MOS器件性能的对比。
- This thesis reports an analysis of DC and AC behavior of dual-material (DM) double-gate (DG) fully-depleted (FD) silicon on insulator (SOI) MOS device. 摘要:本论文中提出双材料双闸完全解离绝缘体上矽金氧半元件在直流与交流的分析。
- The floating gate can only be accessed though another transistor, the control gate. 浮动门虽然只能进入另一个晶体管,控制闸门。
- A memory cell array includes a plurality of memory cells each of which has a control gate and a floating gate. 存储单元阵列包括多个存储单元，每一存储单元具有控制栅和浮动栅。
- As compared with the MS structured device, the MOS device exhibits more perfect interface, because the oxide layer can effectively prevent the interdiffusion of Pd and GaAs. 研究结果显示，降低无电镀镀浴之组成：如整体镀浴浓度、前驱盐浓度、还原剂浓度等变因，均将使钯膜粒径减小，分布均匀。而所得元件之二极体电性愈佳。
- In chapter 1, we make an introduction for Fin-FET and describe its evolution from conventional MOS device and propose a structure called Tri-Gate Fin-FET device. 第一章主要是针对鳍状场效电晶体元件做一个简介，说明鳍状场效电晶体元件如何从传统的金氧半元件演化而来，并提出一个三闸鳍状场效电晶体元件。
- Tunneling allows voltage to flow from the control gate to the floating gate through the dielectric layer of oxide which separates them. 允许从隧道流电压控制的浮动栅栅绝缘层氧化物通过分隔他们。
- refractory metal gate MOS integrated circuit 难熔金属栅MOS集成电路
- silicon gate MOS integrated circuit 硅栅MOS集成电路
- This device could exhibit the negative differential resistance (NDR) characteristics in the current-voltage curve by suitably arranging the parameters of the MOS devices. 经由适当的设计MOS元件的参数，我们可以在 其电流-电压特性曲线上得到负微分电阻的特性。
- polycrystalline silicon gate mos 多晶硅栅金属氧化物半导体
