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- ferroelectric nanostructures 铁电纳米结构
- Why not use photolithography to make nanostructures? 为什麽不使用光蚀刻法制造奈米结构？
- Hysteresis phenomenon is very common in many ferroelectric materials. 研究磁电滞回线在交变外场下的动力学性质的课题称为回线动力学。
- Feasibility of ferroelectric cathode used for neutralizer is proposed. 提出铁电阴极用于小功率电推进中和器的可能性。
- The electric fatigue performances of PLZT ferroelectric ceramics were studied. 研究了PLZT铁电陶瓷的电疲劳特性。
- Application of metastable helium atomic beam in nanostructures fabrication[J]. 引用该论文 陈献忠;姚汉民;陈旭南.
- Raman Study of Nanocrystal Ba1-xSrxTiO3 on Ferroelectric Phase Transition[J]. 引用该论文 郭惠芬;张兴堂;武超;郭浩;李蕴才;黄亚彬;杜祖亮.
- Development of the ferroelectric ceramics in recent years has led to superior detection ability. 近代所发明的铁电陶瓷具有优良的检测能力。
- The need to understand the physical properties of nanostructures is ubiquitous in our modern society. 由于电子元件愈做愈小，对其中微小结构的物理性质的了解十分重要。
- THE INTEREST in nanostructures is so great that every plausible fabrication technique is being examined. 人们对奈米结构的兴趣这麽高，使得所有可行的制造技术都经过检验。
- ENERGY GAP AND INFRARED ABSORPTION OF LAYER-STRUCTURE PEROVSKITE FERROELECTRIC THIN FILMS? 层状类钙钛矿结构铁电薄膜的禁带宽度及红外吸收研究?
- Effect of the bottom electrodes on the capacitors of PYZT ferroelectric thin films. 底电极对PYZT铁电薄膜电容器的影响。
- The polarization mechanism of ferroelectric materials includes displacement polarization and turning-direction polarization. 摘要铁电材料的极化机制包括：位移极化，转向极化。
- The relationship between dielectricrelaxation character and structural ordering of the sintered PSN ferroelectric cera-mics was investigated. 对此PSN铁电陶瓷的介电弛豫特性和结构有序度之间的关系进行了研究。
- The study of Si nanostructures is a very active field of research because of their strong room temperature photoluminescence. 由于在室温下奈米矽可以产生很强的光激发光，因而引起广泛地研究与讨论。
- The dielectric nonlinearity of the PMN-PZN-PT relaxor ferroelectric ceramics under DC bias was investigated. 在一定温度范围内，对PMN-PZN-PT系弛豫铁电陶瓷直流偏压下的介电非线性进行了研究。
- The piezoresponse force microscopy(PFM) is a useful method to study ferroelectric domains of ferroelectric films. 压电响应力显微镜为铁电薄膜电畴的研究提供了一种有效的检测方法。
- We propose a kind of asymmetric magnetic-barrier nanostructures and study its electron-spin transport properties. 提出了一种反对称磁垒纳米结构,并研究了其电子自旋输运的性质。
- The combined effect of film thickness and stress on BTO ferroelectric behavior was studied. 实验结果表明,BTO薄膜中的应力为张应力。
- CAVAZOS T,SHIFFLER D,WROBLEWSKI B,et al.Initial tudies of ferroelectric cathode[J]. IEEE,1993,2:950. 陈忠道;张树人.;强电流铁电阴极材料发射电流密度测试电路[J]
