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- double diffused mos transistor 双扩散金属氧化物半导体晶体管
- After analysis the structure of normal MOS, VDMOS(Vertical Double diffused MOS),VVMOS(Vertical V-groove MOS) and UMOS, we found the benefit of the trench MOS. 本文通过与传统平面型、V形、U形等功率MOS器件结构的对比，分析了深沟槽型功率MOS器件的独特优点。
- double diffused MOS integrated circuit 双扩散金属-氧化物-半导体集成电路
- double diffused mos fet dmos场效应晶体管
- vertical double diffused mos 垂直双扩散金属氧化物半导体结构
- Then a novel multi-valued flip-flop is designed based on the improved clock-controlled neuron MOS transistor. 然后采用此改进的钟控神经MOS管设计了一种新型多值触发器。
- The DAC transfers the data stored in EPROM to the gate of MOS transistor so as to control the bias current, and tune the responsivity of detector and dummy detector. 用数模转换器将存储在EPROM内的偏置电压输出到MOS管的栅极上,实现对偏置电流的控制,调节探测元及补偿元的响应率。
- trench double diffusion mos 隔离槽双扩散金属氧化物半导体
- The clock-controlled neuron MOS transistor is investigated firstly, and its improved technique is proposed in this paper. 摘要首先对钟控神经MOS管进行研究，提出了相应的改进方法。
- By this concept, we design a photo MOS transistor which can be turn on only by illumination instead applying voltage on gate. 利用此概念我们期望可以设计出一个完全只需要利用照光，而不需要在闸极外加偏压就能驱动元件运作的金氧半电晶体光侦测器。
- Based on the investigation of the neuron MOS transistor, this paper proposes a new method for designing the multi-valued D/A and A/D converter. 摘要通过对神经MOS晶体管特性的研究，提出了一种多值D/A、A/D转换器设计的新方案。
- Then, we show the feasible application of nickel silicide on photo detector and design the so-called photo gate MOS transistor to do further study in the future work. 最后，我将提出矽化镍在光侦测器上的可行性并为了更进一步的研究而设计出所谓的光闸极金氧半电晶体。
- A high-performance low-power low-noise preamplifier working at 77K for IR detectors is designed by a single-ended folded-cascode structure and a MOS transistor operating in the linear region as feedback resistor. 利用single endedfolded cascode结构和MOS管工作在线性区做反馈电阻;实现了一种在77K工作的高性能低功耗、低噪声前置放大器.
- This device consists of a n-channel depletion mode MOS transistor,a lateral pnp bipolar transistor and a resistor and has the behavior of "dual negative resistance" characteristics and easily controlled resistance in positive resistance region. 该器件由一n沟耗尽型MOS管、一横向pnp双极晶体管和一个电阻集成而得。 它具有“双负阻”特性和正阻区阻值易于控制等特点。
- Complex salts derived from the reaction of the double diffused reagents were deposited on the solution specimen?s surface when treated with 40% DAP?s followed by concentration and the second soln. 第一液（磷酸氢二铵）药剂浓度40%25与第二液反应后，部份试材表面出现结晶或粉状药剂沉积之现象。
- dual diffused MoS integrated circuit 双扩散型MoS集成电路
- In data output circuit, the MOS transistor works at a high speed when the supply voltage increases in low temperature. Then the variety speed of the output signal is so high that many disturbing signals are aroused. 数据输出电路在电源电压升高而温度很低的情况下;MOS管工作速度快;会使输出信号变化率过大而产生许多干扰信号.
- The filter has several advantages such as low sensitivity, lower power supply, higher frequency,etc. PSPICE simulation at MOS transistor level is carried out and the simulation results show that the proposed circuit is feasible. 该滤波器具有灵敏度低、低电压供电、频带宽等优点, 并面向实际电路完成了MOS管级的PSPICE (集成电路的模拟程序) 仿真, 结果表明所提出的电路方案可行
- With the utilization of the voltage controlled resistor characteristics of MOS transistor and the introduction of a feedback circuit controlled by input and output voltages, a dynamic and optimal slope compensation circuit is realized. 该设计引入了输入、输出电压反馈控制电路,利用工作于线性区的MOS管压控电阻特性,实现了动态、优化的斜坡补偿。
