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- WKB SOLUTION FOR A SYMMETRICAL DOUBLE POTENTIAL WELL TO POWER FOUR WKB近似方法在解对称四次方双势阱中的应用
- Energy level study of double potential well with middle power rampart 双阱势能级研究
- double potential wells 双势阱
- The book is arguably a potential best seller. 该书或可成为一部畅销书。
- The book is a potential best seller. 这本书可成为一本畅销书。
- Mean escape time from a symmetric potential well, low temperature asymptotics. 从对称型势位能逃脱平均时间，低温尽近似。
- Objective To demonstrate the value of analysis of double potential(DP) at the posteromedial right atrium in identification of left atrial origin of atrial tachycardia (AT). 摘要目的探讨右房后壁双电位标测对判断房性心动过速（简称房速）是否起源于左房的价值。
- Objective To demonstrate the value of analysis of double potential(DP) at the posteromedial right atrium in identification of left atrial origin of atrial tachycardia(AT). 目的探讨右房后壁双电位标测对判断房性心动过速(简称房速)是否起源于左房的价值。
- I mean the opportunity can waken my potential better. 我想说这个机会能够更好的激发我的潜能，
- Wave function, Schrodingger equation, infinite deep potential well in one dimension. 波函数;薛定谔方程;一维无限深势阱;
- The column symmetry of transverse continuum potential well is independent of the nanotube structure. 沟道连续势阱的柱状对称性与碳纳米管结构的变化无关。
- A charge-coupled device in which the potential wells are created at the semiconductor insulator interface and the charge is transferred along that interface. 一种电荷耦合器件,其中在器件的半导体-绝缘体界面处建立电势井。电荷沿着该界面传输。
- Problem Set 5: Shape of the limiting distribution for unbiased, subdiffusive CTRW; Mean escape time from a symmetric potential well, low temperature asymptotics. 问题5：不偏的次CTRW极限公布的形状；从对称型势位能逃脱平均时间，低温尽近似。
- The double potential step technique was applied to the second electrolysis for the growth of AuNP seeds.The results revealed that the size of the AuNP was dependent on the electrolysis coulomb. 接着采用电位双阶跃方法，使金纳米粒子在原来基础上继续生长，控制电解电量可获得不同大小的金纳米粒子。
- But they are assiduous and innovation spirit relatively weak in the work, needs the employer the raise, can display the ON potential well. 但他们在工作中的刻苦和创新精神相对弱些，需要用人单位的培养，才能更好地发挥出潜能。
- Problem Set5: Shape of the limiting distribution for unbiased, subdiffusive CTRW; Mean escape time from a symmetric potential well, low temperature asymptotics. 问题5：不偏的次CTRW极限公布的形状；从对称型势位能逃脱平均时间，低温尽近似。
- Due to band bending of semiconductor surface applied electric field, the electric emission on silicon surface can be considered as a tunneling process through a potential well. 摘要硅作为场发射阴极成为可能，硅的场发射研究又重新引起人们的重视。
- Double potential step chronoabsorptometry 双电势跃计时吸光度法
- symmetrical double potential barrier 对称双势垒
- He is working double tides to finish his essay. 他日夜苦干，赶写他的文章。
- 今日热词
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- 深远海浮式风电平台 - deep-sea floating wind power platform
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- 京雄高速公路 - Beijing-Xiongan expressway
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- 农业及相关产业增加值 - the added value of agriculture and related industries
