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- Indium nitride (InN), with its wurtzite crystal structure and 0.7 eV direct band gap, is a promising III-V compound semiconductor for high-frequency and high-speed devices and optical communication. 氮化铟材料拥有0.;7电子伏特的直接能隙，被预期能运用在高频高速的元件和光通讯的材料上。
- The tunability of directional band gap in a two-dimensional photonic crystal of air holes in a semiconductor matrix is demonstrated numerically, using the plane wave expansion calculation. 采用平面波展开法证实了填充液晶的二维三角形分布的空气孔光子晶体方向能隙的可调节性。
- A novel BWO with photonic band gap structure[J]. 引用该论文 陈波;钱宝良;钟辉煌.
- Photonic crystals are a new kind of materials with photonic band gap. 光子晶体是一种具有光子带隙的新型功能材料。
- A novel photonic band gap (PBG) structure is presented in this paper. 提出一种新型微带光子带隙结构。
- The optical band gap energy of CuInS2 thin films, deduced from the optical transmission spectrum, was 1. 50 eV. 结果表明;所制得的样品为四方结构的多晶CuInS_2薄膜;Cu/In比接近化学计量比;其光学禁带宽度为1.;50eV。
- The optical band gap increases from 3.21 eV to 3.25 eV as increasing dopant concentration from 0.01% up to 1%. 薄膜光学带隙随掺杂原子分数的提高从3.;21 eV增大到3
- But CIS possesses band gap energy equal to 1.04eV, which is not within the maximum solar absorption region. 太阳光的吸收要求材料的最佳带隙在1.;45eV左右;不过CuInSe_2的带隙为1
- Our results demonstrate that lattices compounding can create broad complete photonic band gap. 设计了几种一维光子晶体光通信器件。
- The reduction of Si band gap and the enhancement of light intensity under external tensile strain are observed. 在施加外加的伸展应力之下，我们观察到矽的能隙缩减还有光强度的增加。
- Tunable band gap is a new and important field in photonic crystals research because of many potential applications. 可调光子晶体由于其潜在的应用价值成为现今光子晶体研究中的一个热点。
- There are resonance modes in the photonic band gap when defects are introduced to the integrity photonic crystals. 完整二维光子晶体中引入点缺陷后,在光子晶体禁带中会有共振模出现;
- The band gap's broaden is apparent when the larger refractive index layer is graded. 改变高折射率层的几何厚度，光子带隙的拓宽更为显著。
- Due to quantum confinement effect,band gap of semiconductor nanocrystals(NCs) is dependent on the particle size. 由于量子限域效应,半导体纳米晶的能带宽随粒子大小而改变。
- All internal reference voltages are derived from a temperature compensated and trimmed, on-chip band gap circuit. 所有的内部参考电压都做了温度补偿和平衡，芯片内置带隙电路。
- The The results indicate that titanium oxide films have wide band gap and better blood-compatibility than LTIC. 研究表明， 氧化钛薄膜具有宽禁带的半导体特性，血液相容性优于热解碳。
- The photonic band gap of 1-D photonic crystals with graded single refractive index layer is investigated using the method of the characteristic matrix. 摘要利用特征矩阵方法研究了一类周期厚度变化的－维光子晶体的能带特性。
- We can control the photonic band gap via changing the geometric thickness according to the requirement during designing the photonic crystal. 在设计光子晶体时，可以根据需要，通过缓慢改变光子晶体某一折射率层的和何厚度可实现对光子带隙的控制。
- The a-D films have more than 85% sp3 bonding. Density of the films is more than 3 glcm3. Band gap of 2.4 eV is obtained. Hardness is about 30 60 GPa. 其SP~3键的含量超过 85%25，密度超过 3g/cm~3;禁带宽度达2.;4eV，显微硬度达30~60GPa，厚200nm的薄膜表面粗糙度小于1nm。
- The absorption coefficient,band gap and activation energy of these crystallized a-Si_xC_(1-x):H films decrease whilethe dark conductivity increases. 晶化后的a-Si_xC_(1-x):H膜光吸收系数、光学带隙和电导激活能下降;室温电导率增加.
