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- composite buffer layer 复合缓冲层
- The quality of buffer layer and thin films was analyzed by AFM, XRD, RHEED and XPS respectively. 采用原子力显微镜(AFM)、X射线衍射(XRD)、反射高能电子衍射(RHEED)和X射线光电子能谱(XPS)等表征方法,对碳化层的质量和3C-SiC薄膜的结构进行了表征。
- By simulation, we found that there is a hetero-junction between Silicon buffer layer and Si/SiGe MQW structure. 从实验的数据得知，在室温下，样品的矽发光强度随著注入电流的增加而有显著的增强；
- The product is separated from the principle of suction by the absorption layer, a buffer layer, integrated sound insulation layer formed. 该产品采用外隔内吸的原理，由吸声层，缓冲层，隔声层综合而成。
- The reason is not made clear yet, but these results suggest that HVPE growth or an MN high temperature buffer layer gives a better quality GaN. 目前，其原因尚不清楚，但是这些结果表明采用HVPE生长方法或用一高温AlN阻挡层可以得到高质量的GaN。
- We characterized the films through RHEED and AFM and found the buffer layer reduced the mismatch and improved the quality of ZnO films greatly. 通过室温光致发光（PL）谱的测试分析，发现L-MBE生长过程中氧压对ZnO薄膜的结构缺陷浓度有很大影响。
- A simple model is presented to discuss the effect of ultra-thin buffer layer on the generation of misfit dislocations and strain relaxation in strained heterostructures. 摘要用一个简单模型讨论了应变异质结构中嵌入中间层对界面失配位错产生和应变释放的影响。
- Investigation of Quantum Well Lasers which Have Superlattice Buffer Layers[J]. 引用该论文 张福厚;宋珂;邢建平;郝修田;曾一平.
- Then we use Si wafer as substrate to grow InN QDs, and then AlN buffer layer will grow under high temperature(about 1050 oC) onto substrate, finally, InN QDs will grow internally onto buffer layer. 以单晶矽晶圆做为成长氮化铟量子点之基板，接著在高温下(约1050度C)成长氮化铝缓冲层，最后用间歇性的方式成长氮化铟量子点。
- Adjacent switchgears are isolated by its self side board, after putting the switchgears together, air buffer layer exist yet, it may prevent the switchgears from pronging and melted by electric arc. 相邻的开关柜由各自的侧板隔开，拼柜后仍有空气缓冲层，可以防止开关柜被故障电弧贯穿熔化。
- The results show that the introduction of a buffer layer structure of the GCT can adjust blocking characteristic and on-state characteristic well, and optimize the integrated characteristic of GCT. 模拟结果表明，引入缓冲层的GCT结构能够很好地调节阻断特性和通态特性，使GCT的综合特性得以优化。
- We find a reduction in TD density in GaN films grown on graded AlxGa1-xN buffer layers, in comparison with those grown directly on a thin AlN buffer layer. 与那些直接生长在AlN薄膜上的GaN薄膜相比，生长在组分渐变的AlxGa1-xN 缓冲层上的GaN薄膜内具有更少的螺位错密度。
- Growth of transitional buffer layers may improve the interfacial lattice mismatch,which decreases the adhesion. 膜/基界面之间不匹配将使附着力下降，可通过设置过渡层(梯度层)的方式加以解决。
- Keywords tubing conveyed perforation;composite buffer;blaster;pin; 油管传输射孔;复合式缓冲器;起爆器;销钉;
- In the experiment, GaN buffer layers have been deposited on substrates with a nitrogen plasma as a nitrogen source and TEG as a Ga source. 实验过程中,以氮等离子体为氮源,以三乙基镓(TEG)镓源,在蓝宝石(Al_2O_3)衬底上生长GaN缓冲层。
- The CeO_2 and Y_2O_3 buffer layers were deposited on the cube textured metallic Ni substrates by using reactive magnetron sputtering. 采用反应溅射的方法在具有立方织构的Ni基底上制备了CeO2,Y2O3缓冲层。
- Hence, we deposited 7.5nm and 15nm LT-AlN as buffer layers on two samples, trying to make improvement on lattice quality. 因此，我们将两个试片分别镀上7.;5奈米及15奈米厚度的氮化铝作为缓冲层，看看是否能对于晶体品质上有实质上的帮助。
- Higher growth temperature of buffer layers can lead to more strongly photoluminescence intensity. b) Effects of treatment processes. 光谱测试表明缓冲层生长温度越高，光致发光强度越强；
- A buffer in a drum used to temporarily store data. 磁鼓中用来暂时存放数据的一种缓冲区。
- It was found that there exist many nanometer-sized holes on the surface of SiN buffer layers, and such porous SiN layers probably could enhance the lateral growth. 在氮化矽缓冲层表面可以发现许多奈米尺寸大小的孔洞，其特性相信可提升之后氮化镓侧向的磊晶成长。
