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- complementary mos device 互补金属氧化物半导体器件
- This thesis reports an analysis of DC and AC behavior of dual-material (DM) double-gate (DG) fully-depleted (FD) silicon on insulator (SOI) MOS device. 摘要:本论文中提出双材料双闸完全解离绝缘体上矽金氧半元件在直流与交流的分析。
- As compared with the MS structured device, the MOS device exhibits more perfect interface, because the oxide layer can effectively prevent the interdiffusion of Pd and GaAs. 研究结果显示，降低无电镀镀浴之组成：如整体镀浴浓度、前驱盐浓度、还原剂浓度等变因，均将使钯膜粒径减小，分布均匀。而所得元件之二极体电性愈佳。
- complementary mos integrated circuit 互补金属氧化物半导体集成电路
- In chapter 1, we make an introduction for Fin-FET and describe its evolution from conventional MOS device and propose a structure called Tri-Gate Fin-FET device. 第一章主要是针对鳍状场效电晶体元件做一个简介，说明鳍状场效电晶体元件如何从传统的金氧半元件演化而来，并提出一个三闸鳍状场效电晶体元件。
- This device could exhibit the negative differential resistance (NDR) characteristics in the current-voltage curve by suitably arranging the parameters of the MOS devices. 经由适当的设计MOS元件的参数，我们可以在 其电流-电压特性曲线上得到负微分电阻的特性。
- As MOS devices are scaled down to the deep-submicrometer region, the thickness of silicon oxide also scales down. 当金氧半元件缩小至深次微米区域，矽氧化层的厚度也随之变薄。
- The degradation induced by interface state is one main reason for failure occurs in deep-sub-micron MOS devices. 界面态引起的器件特性的退化是深亚微米器件失效的一个重要因素。
- Finally the thesis discusses a fourfold voltage charge pump only has 8 MOS devices, even 7 MOS. 本文在6管交叉耦合电荷泵的基础上提出了一种8(7)管4倍电荷泵。
- The radiation effects of MOS devices implanted BF2 at low dose rate are investigated in some different respects in this paper. 本文从不同方面对BF_2~-注入MOS管低剂量率辐照效应进行了深入的研究。
- MOS devices have to suffer from ionizing radiation as they are widely used in theenvironment of space, nuclear energy and nuclear weapon. 随着航天技术、核能技术及其核武器等高技术的迅速发展,越来越多的MOS器件需要在电离辐射环境中工作。
- The two-dimensional device simulation software Medici was used to simulate the behaviors of MOS and SOI MOS devices with ZrO2 gate dielectrics, which was compared with those of traditional MOS and SOI MOS devices. 采用二维模拟软件Medici对以ZrO:为栅介质的体硅MOS器件和501 MOS器件的性能进行了模拟。 系统模拟了以ZrO:为栅介质的体硅MOS器件和常规MOS器件性能对比，以及ZrO:为栅介质的501 MOS器件的性能与常规501 MOS器件性能的对比。
- First, increasing demands for processing speed and functional density have pushed IC fabricators to shrink further the minimum dimensions of MOS devices. 首先，增加了处理速度和功能密度的需求，推动IC制造者进一步缩减MOS装置的最小尺寸。
- Effects of MOS device dimension on radiation response 器件尺寸对MOS器件辐照效应的影响
- His personality is complementary to hers. 他的个性与她的相反相成。
- A display device that uses a cathode ray tube. 一种使用阴极射线管的显示装置。
- If took ten men to wrestle the device into place. 用了10个人才把那台装置挪动到位。
- Study on Bird's Beak Extrinsic Capacity of MOS Device MOS器件鸟咀区非本征电容研究
- complementary MOS logic circuit [计] 互补金氧半导体逻辑电路
- silicon gate complementary MOS [计] 硅栅互补金属氧化物半导体
