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- Features: Low collector emitter saturation voltage VCE(sat). 特点:集电极-发射极饱和压降低。
- Features: High DC current gain),low VCE(sat),large collector power dissipation,wide SOA. 特点:直流电流增益高,饱和压降低,集电极耗散功率大,,安全工作区宽。
- emitter current for zero collector curre 发射极漏电流
- For logic devices, the incremental current gain is very important. 对于逻辑器件来说,提高电流增益是非常重要的。
- Features: Low VCE(sat),excellent DC current gain characteristics. 特点:饱和压降低,极好的直流电流增益特性好。
- Features: Low saturation voltage, high DC current gain. 特点:饱和压降低;直流电增益高。
- Features: Low VCE(sat), excellent DC current gain characteristics, wide SOA. 特点:饱和压降低,极好的直流电流特性,宽阔的安全工作区。
- On account of the socalled "base region self-crowding effect", this would make the emitter current density not uniform over the emitter junction area, the cur... 文中着重分析在各种注入条件下发射结面上发射极电流密度的分布,亦即所谓基区电阻自偏压截止效应,最后给出主要结论。
- Features: High DC current gain and excellent hFE linearity,low saturation voltage. 特点:直流电流增益高,放大线性好,饱和压降低。
- Features: High DC current gain, excellent hFE linearity, low saturation voltage. 特点:直流电流增益高,放大线性好,饱和压降低。
- Those effects result in a non-ideal G/R base leakage current thus decrease the output current gain. 譬如在基极电流上产生非理想的复合漏电流,而造成电流増益的下降。
- Features: Low VCE(sat),excellent DC current gain characteristics, complements the 2SD2118(3DG2118). 特点:饱和压降低,极好的直流电流增益特性,与2SD2118(3DG2118)互补。
- Features:High DC current gain and excellent hFE linearity,low saturation voltage. 特点:直流电流增益大,放大特性好,饱和压降低。
- Features: High DC current gain, low saturation voltage,high col lector power dissipation. 特点:高直流电增益,饱和压降低,高集电极耗散功率。
- grounded emitter current amplification f 发射极接地短路反方向电流放大系数
- Quantum apparatus have lower emitted threshold, great emit current density, more stability etc excellent field emit performance so that it could use to facture high performance flat displayer. 量子器件具有发射阈值低、发射电流密度大、稳定性高等优异的场发射性能。
- My husband is a stamp collector. 我丈夫是个集邮者。
- Current Gain and Maximum Collector Voltage of InAs/InP_(0.7)Sb_(0.3) HET InAs/InP_(0.;7)Sb_(0
- Low-level human body model(HBM)ESD stresses were imposed on microwave low noise amplifier NPN silicon epitaxial transistor 2SC3356; it was shown that the DC current gain hFE degraded gradually with the increment of the times of ESD stresses. 从CB管脚对微波低噪声NPN晶体管2SC3356施加低电压人体模型(HBM)的ESD应力;发现;随着ESD应力次数的增加;器件的放大特性hFE逐渐退化;并且当电压达到一定水平;多次的ESD可以使器件失效.
- The region in a transistor between the emitter and the collector. 基极晶体管中发射极和集电极之间的区域。