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- Chemical mechanism of exotic weed invasion. 外来杂草入侵的化学机制
- The effect on IHT and appliance in training physiological and biologic chemical mechanism has been summarized, in order to apply on training further in the future. 摘要从间歇性低氧训练的产生及其在运动训练中的应用和生理、生化机制等方面进行综述，旨在促进间歇性低氧训练在运动训练中进一步应用。
- The main chemical mechanism of the adsorption was the formation of double hydrogen bands between AFB_1 and montmorillonite or modified montmorillonite. 说明蒙脱石和改性蒙脱石对AFB_1存在化学吸附，其选择性吸附机制可能主要是由于它们边缘的羟基与AFB_1之间形成了双氢键。
- The physical and chemical mechanism of propellant / liner interface debonding failure is one of the most important part of the rocket engine failure. 推进剂/衬层界面脱粘失效的物理、化学机理研究是火箭发动机装药失效机理研究的重要部分之一。
- By using XPS,before and after the intoxication of mixed oxide catalysts,the various appearance and the composition. valence and chemical mechanism of the active component of catalysts were studied. 运用XPS分析方法研究一系列复合氧化物催化剂中毒前后硫在其表面的各种形态及催化剂活性组分中毒前后的组成、价态、化学机理及其变化。
- Chemical Mechanical Polishing (CMP) is the most effective way to achieve global planarization in semiconductor process. 化学机械抛光，是半导体制程中达到全域平坦化最有效的办法，同时也是众多制程中不可或缺的重要制程步骤。
- Chemical mechanical polishing (CMP) is the mostly used planarization process in the semiconductor industry today. 摘要:化学机械抛光是现在半导体产业中最常被使用的平坦化制程。
- Bachelor degree in Mechanical engineer or equivalent, preferred education background in Welding, Chemical Mechanical, NDT, Power Equipments, etc. 本科以上学历,机械背景,焊接,化工机械,无损检测,动力设备专业优先。
- Diamond disk conditioners have long served the semiconductor chemical mechanical polishing (CMP) process for polish pad dressing. 摘要钻石修整器应用于化学机械抛光中抛光垫的修整，已有很长的一段时间。
- Chemical mechanical polishing (CMP) is the most effective method to achieve global planarization in semiconductor industry. 化学机械抛光，是目前半导体制程中达全域平坦化最有效的方式，同时也是许多制程中不可缺少的步骤。
- Boning, D., W. Moyne and T. Smith, “Run by Run Control of Chemical Mechanical Polishing,” IEEE Trans. CPMT (C), 19, 307-314 (1996). 周育乐，考虑制程使用时间之批次控制方法，台湾大学工业工程研究所硕士论文，台北，台湾(2000)。
- G. Corlett, “Targeting Water Use for Chemical Mechanical Polishing,” Solid State Technology, Vol. 43, No. 6, pp. 201-206 (2000). 蔡明莳，“化学机械研磨后清洗技术简介”，奈米通讯，第6卷，第1期，第21-27页（1999）。
- Both high material removal rate(MRR) and smooth surface have to be achieved in primary chemical mechanical polishing(CMP) of hard disk substrates. 硬盘盘基片粗抛光必须在较高材料去除率的基础上获得高表面质量。
- chemical mechanism of viscous increase 化学增黏机制
- physiological and biologic chemical mechanism 生理生化指标
- With compensation-oriented chemical mechanical polishing (CMP) as the carrier, the study elucidates the procedures of this method for the innovative research and development case. 以补偿式化学机械抛光为载具，作为进行创新研发之案例来阐述本方法之流程步骤。
- Chemical mechanical polishing (CMP) technology has been considered as the most effective local and global planarization technology for wafer and widely used in ULSI fabrication. 化学机械抛光(CMP)是目前唯一能够实现硅片局部和全局平坦化的实用技术和核心技术，正广泛地应用于IC制造中。
- Slurry flow weighs heavily on the performances of chemical mechanical polishing(CMP) process,wherein the pad surface will alter the flow features considerably. 抛光垫表面特性能可大大改变抛光液的流动情况,从而影响化学机械抛光的抛光性能。
- chemical mechanism of flame retardant 阻燃化学机理
- A reactor is a container for chemical reaction. 反应器是进行化学反应的容器。
