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- Effect of Deposition Parameters on the c BN Content in the BN Films by IBED 镀膜参数对离子束增强沉积氮化硼薄膜中立方相含量的影响
- All the F-N curves are straight line that shows electrons are emined from BN to vacuum tunneling through the potential barrier at the surface of the BN films. 不同样品的Fowler-Nordheim(F-N)曲线均为直线;表明电子发射是通过隧穿BN表面势垒发射到真空.
- In the paper, the newest methods for syntyesing diamend film, Cubic BN film,superconductor film and semiconductor film at home and abroad are introduced. 本文主要介绍国内外激光技术在合成金刚石薄膜、立方氮化硼薄膜、超导薄膜、半导体薄膜等的最新方法.
- TEM and HRTEM micro graphs show that thin a BN and h BN layers exist at the c BN and the substrate interface,and that (0002) h BN is in the surface normal direction of the substrate and single phase c BN grows on top of the interface layers. TEM及HRTEM对膜的断面结构分析表明 ,在膜与基片的界面处存在很薄的非晶氮化硼和六方氮化硼 (h BN)层 ,h BN(0 0 0 2 )晶面垂直于基片表面 ,在界面层之上生长着单相c BN层
- Cubic boron nitride(c BN), hexagonal boron nitride (h BN), B 2O 3, FeB and Fe 2B were found in the hardened layers by X ray photoelectron spectroscopy(XPS) and X ray diffraction (XRD). 经X射线电子能谱 (XPS)和X射线衍射分析 (XRD) ,发现硬化层中的组织有立方氮化硼 (c BN)、六方氮化硼 (h BN)、B2 O3,FeB和Fe2 B。
- Recently there has been an extensive worldwide effort to synthesize BN films and investigate ultraviolet sensitive properties of BN, which has an important significance to the development of ultraviolet band detecting. 氮化硼薄膜材料的制备及其紫外光敏性能研究,是近年来宽禁带半导体材料研究的热点课题,对紫外波段信息探测领域的发展有重大意义。
- From the I?V curve, the reversedthreading voltage of p?Si/n?BN heterojunction is found to beabout 15V, and by immitating these I?V curves, the structure ofthe energy in doped BN films was estimated. 发现p-Si/n-BN异质结反向击穿电压为15伏; 并通过模拟所测样品的电流电压曲线对掺杂氮化硼薄膜的能带结构做了预测;
- In this paper we studied the influence of process parameters of depositing cBN films, the n-rype doping of BN films and the properties of p-Si/n-BN heterojunctions and gained the results as follows. 本文主要研究工艺参数对制备立方氮化硼的影响,氮化硼的n型掺杂和p-Si/n-BN异质结特性等内容,得到了如下主要结果。
- Deposition of BN Films by Radio Frequency Magnetron Sputtering 射频磁控溅射法制备氮化硼薄膜
- Electron Emission Characteristics of BN Films Synthesized by PECVD PECVD法淀积氮化硼薄膜场发射特性研究
- Influence of boron buffer implantation layer on growth of BN films 硼缓冲注入层对氮化硼薄膜生长的影响
- C comes after B in the alphabet. 在字母表中C接在B后面。
- She loves old Humphrey Bogard films. 我非常喜欢老演员亨弗莱鲍嘉主演的电影。
- Effect of Thickness of Thin BN Films on Field Emission Characteristics 氮化硼薄膜的厚度对场发射特性的影响
- B comes before C in the alphabet. B在字母表里排在C之前。
- She left out a "c" in "account" . 她在"account"这个词中漏掉了一个"c"。
- Study on MWECR CVD Deposition Technique and Growth and Properties of BN Films MWECR CVD系统及BN薄膜生长与特性研究
- Growth of Highly Adhesive Cubic BN Films by Active Reaction Evaporation ARE法制取立方氮化硼膜时提高膜基结合力方法的研究
- Most old films were made in black and white. 多数旧电影片都是黑白的。
- These films are suitable for adults only. 这些电影只适宜成人观看。