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- As compared with the MS structured device, the MOS device exhibits more perfect interface, because the oxide layer can effectively prevent the interdiffusion of Pd and GaAs. 研究結果顯示，降低無電鍍鍍浴之組成：如整體鍍浴濃度、前驅鹽濃度、還原劑濃度等變因，均將使鈀膜粒徑減小，分佈均勻。而所得元件之二極體電性愈佳。
- As MOS devices are scaled down to the deep-submicrometer region, the thickness of silicon oxide also scales down. 當金氧半元件縮小至深次微米區域，矽氧化層的厚度也隨之變薄。
- This thesis reports an analysis of DC and AC behavior of dual-material (DM) double-gate (DG) fully-depleted (FD) silicon on insulator (SOI) MOS device. 摘要:本論文中提出雙材料雙閘完全解離絕緣體上矽金氧半元件在直流與交流的分析。
- In chapter 1, we make an introduction for Fin-FET and describe its evolution from conventional MOS device and propose a structure called Tri-Gate Fin-FET device. 第一章主要是針對鰭狀場效電晶體元件做一個簡介，說明鰭狀場效電晶體元件如何從傳統的金氧半元件演化而來，並提出一個三閘鰭狀場效電晶體元件。
- This device could exhibit the negative differential resistance (NDR) characteristics in the current-voltage curve by suitably arranging the parameters of the MOS devices. 經由適當的設計MOS元件的參數，我們可以在 其電流-電壓特性曲線上得到負微分電阻的特性。
- The degradation induced by interface state is one main reason for failure occurs in deep-sub-micron MOS devices. 界面態引起的器件特性的退化是深亞微米器件失效的一個重要因素。
- Finally the thesis discusses a fourfold voltage charge pump only has 8 MOS devices, even 7 MOS. 本文在6管交叉耦合電荷泵的基礎上提出了一種8(7)管4倍電荷泵。
- My heart beat thick in the course of the interview. 在面試過程中我的心跳得厲害。
- TDDB evaluation experiments are implemented on the thin gate oxides MOS capacitor,and a method of precise measurement and characterization the trap density and accumulative failure are presented. 採用恆定電流應力對薄柵氧化層MOS電容進行了TDDB評價實驗,提出了精確測量和表徵陷阱密度及累積失效率的方法。
- The radiation effects of MOS devices implanted BF2 at low dose rate are investigated in some different respects in this paper. 本文從不同方面對BF_2~-注入MOS管低劑量率輻照效應進行了深入的研究。
- MOS devices have to suffer from ionizing radiation as they are widely used in theenvironment of space, nuclear energy and nuclear weapon. 隨著航天技術、核能技術及其核武器等高技術的迅速發展,越來越多的MOS器件需要在電離輻射環境中工作。
- The two-dimensional device simulation software Medici was used to simulate the behaviors of MOS and SOI MOS devices with ZrO2 gate dielectrics, which was compared with those of traditional MOS and SOI MOS devices. 採用二維模擬軟體Medici對以ZrO:為柵介質的體硅MOS器件和501 MOS器件的性能進行了模擬。 系統模擬了以ZrO:為柵介質的體硅MOS器件和常規MOS器件性能對比，以及ZrO:為柵介質的501 MOS器件的性能與常規501 MOS器件性能的對比。
- For a while, the darkling star disappeared behind thick clouds. 隱約出現的星星暫時消失在厚厚的雲層後面了。
- First, increasing demands for processing speed and functional density have pushed IC fabricators to shrink further the minimum dimensions of MOS devices. 首先，增加了處理速度和功能密度的需求，推動IC製造者進一步縮減MOS裝置的最小尺寸。
- She felt that his love had always been covered by thick cloudiness. 她覺得他的愛總是籠罩在濃厚的朦朧中。
- Can't you get it into your thick skull that we can't afford it? 你這個笨腦瓜難道不明白我們買不起嗎？
- How can you get rid of this oxide coating? 你們該怎樣除去這些氧化皮？
- He shored up the wall with a thick balk of wood. 他用一根粗大的木頭把牆撐住。
- The thick walls deadened the noise from the street. 這道厚牆隔絕了街上的噪音。
- A large part of Africa is made up of thick forest. 非洲的大部分地區都是密林。
