Unfortunately, the quality of GaN layers grown on SiC is inferior to that grown on the commonly used sapphire substrate due to the relative poor surface properties of SiC. 不幸的，由於碳化矽差表面性質使得氮化鎵在碳化矽成長品質無法與在一般常用藍寶石基板相比。
Theoretical analysis shows that the cyclone field makes the separation by density come true and also supplies the separating method and conditions by surface floatability. 理論分析表明，旋流力場在實現按密度分離物料的同時，又提供了一種高效的按表面性質分選的方法與條件。
