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- A Novel Silicon Photoelectric Negative Resistance Device 一種新型結構的光電負阻器件
- The invention belongs to the photoelectric device technical field, which is a flexible cantilever micro mechanical optical switch. 本發明屬於光電器件技術領域,是一種柔性懸臂微機械光開關。
- silicon photoelectric cell slice 硅光電池片
- silicon photoelectric transistor 硅光電晶體管
- semiconductor photoelectric device 半導體光電器件
- In the computer related sense, a term that denotes sensing and input by means of photoelectric devices. 在與計算機相關的意義中,用來修飾或說明用光電設備進行感測和輸入的術語。
- In the computer-related sense, a term that denotes sensing and input by means of photoelectric devices. 在與計算機相關的意義中,用來修飾或說明用光電設備進行感測和輸入的術語。
- Research of the Wide Barrier Photoelectric Device 寬勢阱半導體光電器件研究
- In the process of photoelectric technology industrialization, the importance of photoelectric devices increasingly appears. 在光電技術產業化的過程中,光電器件的重要性日益現顯。
- CCD(Charge Coupled Devices) is a semiconductor photoelectric device with particular performance, which is applied widely in some fields such as camera and industry measurement and so on recently. CCD (電荷耦合器件)是一種性能獨特的半導體光電器件,近年來在攝像、工業檢測等科技領域裡得到了廣泛的應用。
- Charge Coupled Devices (CCD) is a photoelectric device with high performance, which is widely applied in many areas, including astronomical imaging, entertainment and manufacturing, etc. 電荷耦合器件(CCD)是一種高性能的半導體光電器件,近年來在天文攝像、消費電子、工業檢測等領域裡得到了廣泛的應用。
- Charge Coupled Devices(CCD) is the new type semiconductor integrated photoelectric device developed at the beginning of the seventies of the 20th century. It was put forward at the first of 1970 by W. 電荷耦合器件CCD(Charge Coupled Devices)是20世紀70年代初發展起來的新型半導體集成光電器件;它是美國貝爾電話實驗室的W.
- A new power integrated light activated MOS controlled multiway switch is described,which consists of bi directional thyristors,MOS and photoelectric devices. 介紹了一種新型功率集成光激MOS控制多路開關,它由雙向晶閘管、MOS器件、光電器件組成。
- Application: Sulphuric acid, fertilizer, papermaking, dynamite and rubber. It is also used for the manufacture of II-VI compound semiconductor, photoelectric devices and etc. 主要用途:硫酸,化肥,造紙,炸藥和橡膠。也用於生產II-VI半導體,光電裝置等。
- photoelectric device sensitivity 光電器件靈敏度
- Light Intensity Performance Comparison between Silicon Photoelectric Generator and CCD 硅光電池與電荷耦合器件測量光強性能比較
- In this paper,we introduces a photoelectrical device which use the charge-roast sensor and data processing technology with computer and measure inside diameter of bigger barrels. 利用數顯光柵感測器和計算機數據處理技術來檢測大口徑管道內徑尺寸的光電設備。
- The photoelectric devices, which contained laser and detector were widely used in optical-fiber communication, laser-printer, laser-length-detector, laser instrument and the reading and writing of the CD ROM. etc. 半導體光電器件(激光器、探測器)廣泛應用於光纖通信、激光列印、激光測距、激光儀器、以及光碟的「讀」、「寫」與探測等等。
- ZnO semiconductor is a good material with much application in photoelectricity device due to its wide gap of 3.37eV and large exciton binding energy of 60meV. 寬禁帶ZnO半導體為直接帶隙,室溫帶隙為3.;37eV,且束縛激子能高達60meV,是一種具有很大潛在應用價值的紫外半導體光電器件材料。
- The silicon chips are less than a millimeter thick. 這些矽片厚度不足一毫米。