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- N type and P type 4"-6"silicon epitaxial wafers. 4"-6"N型和P型各類硅外延片。
- There are three proce dures in LED production, namely epitaxial wafer, tube core and encapsulation. 在LED生產過程中,主要有外延片生長、晶元和封裝三個環節。
- From the point of view of industrial chain, value of epitaxial wafer accounts for 70% of the total. 從產業價值鏈的情況看,外延片的生長要佔到70%25的價值。
- Backwardness in high quality epitaxial wafer has limited greatly the development of Chinese LED industry. 高質量的外延片已經成為中國LED產業發展的主要制約環節。
- But in some key procedures, especially epitaxial wafer, there is still great gap compared with international first class level. 但是在關鍵環節,尤其是外延片的生長環節,與世界一流水平還有較大的差距。
- The performance of model WB30 is the same as the 1S2209/1S2208 VHF/UHF silicon epitaxial planar tuning diode made by NEC company. 結果表明WB30型VHF/UHF硅電調變容管已與日本NEC公司的VHF/UHF硅外延平面電調變容管1S2209/1S2208的性能相當.;電調變容管的統調特性及其串聯電阻直接與電視高頻頭的增益相關
- In this paper,intrinsic silicon epitaxial layers were grown on N type(As doped) substrate by UHV/CVD,which were then characterized using SPR,AFM and DCXRD methods. 文章利用自行研製的超高真空化學氣相澱積(UHV/CVD)系統SGE500,在N型(摻As)重摻雜襯底上進行了薄本徵硅外延層生長規律的研究; 並採用擴展電阻(SPR)、原子力顯微鏡(AFM)、雙晶衍射(DCXRD)等方法,對外延層的質量進行了評價。
- In this paper, the area contact model of depletion layer width under avalanche breakdown in Si epitaxial wafer by a three-probe method is analysed. The theory accords with experimental results. 本文分析了三探針測試硅外延片中雪崩擊穿時耗盡層寬度的面接觸模型,理論和實驗結果吻合。
- Low-level human body model(HBM)ESD stresses were imposed on microwave low noise amplifier NPN silicon epitaxial transistor 2SC3356; it was shown that the DC current gain hFE degraded gradually with the increment of the times of ESD stresses. 從CB管腳對微波低雜訊NPN晶體管2SC3356施加低電壓人體模型(HBM)的ESD應力;發現;隨著ESD應力次數的增加;器件的放大特性hFE逐漸退化;並且當電壓達到一定水平;多次的ESD可以使器件失效.
- silicon epitaxial planar transistor 硅外延平面晶體管
- Silicon Epitaxial Planar Capacitance Diode 硅外延平面變容二極體
- silicon epitaxial highcurrent switching diode 硅外延大電流開關二極體
- low-pressure silicon epitaxial technique 低壓硅外延生長技術
- Podium was an OEM of epitaxy wafer growth and chip processing for both nationally and internationally renowned electronic manufacturers. 公司成立初期,主要為國內外知名半導體廠商生產外延片及晶元。
- silicon epitaxial planer transistor 硅外延平面晶體管
- Silicon on sapphire epitaxial wafers GB/T14015-1992硅-藍寶石外延片
- The four-point probe method is used on very thin samples such as epitaxial wafers and conductive coatings. 四探針法用在非常薄的樣品,例如外延晶圓片和導電塗層上。
- Now people can produce a wafer silicon. 現在人們能夠生產一種硅晶薄片。
- silicone epitaxial planar transistor 硅外延平面晶體管
- Hot plate with silicon wafer lowered to heating position. 加熱板與矽晶圓降低至加熱位置。