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- The presence of a large density of contaminant causes anomalous increases in the diode current with increasing reverse bias. 大量沾污也會使二級管電流隨反向偏壓的增加而呈現反常的增大。
- This condition, known as reverse bias, is not conducive to current flow through the junction. 這種叫做反向偏置的狀態不利於電流穿越結。
- The photo-current was found to closely follow the eletro-absorption at large reverse bias values. 在很大的反向偏壓下,光電流緊隨著電吸收發生變化。
- One measure of the quality of a diode is its leakage current at a specified reverse bias voltage. 衡量二極體質量的一個方面就是在規定的反向偏置電壓下的泄漏電流。
- During IGBT is off, the gate should be provided reverse bias voltage for ensuring the safe of IGBT. 在IGBT關斷期間,IGBT的柵極需加反向偏置電壓,避免IGBT的誤動作。
- The gain of the APD can be controlled by the magnitude of the reverse bias voltage. APD的增益可以由反向偏置電壓的幅度來控制。反向偏置電壓越大增益就越高。
- The displacement current mechanism is operative only for capacitors under reverse bias or very weak forward bias conditions which maintain a space-charge layer. 位移電流的機理只對反向偏壓或要維持空間電荷層所需要的非常弱的正向偏壓條件下的電容器才有用。
- The silicon light emitting device also can be used as a photoreceiver under reverse bias, receiving the light emitted from the other one. 此發光元件在反偏下也可當成光接收元件,接收來自同結構順偏元件所發出的光。
- As long as the base-collector junction remains reverse biased, increasing base current will cause a corresponding increase in collector current, and the transistor remains in active mode. 擬譯:只要基極-集電極還處於反偏狀態,上升的基極電流就會相應地引起集電極電流的上升,此時的三極體仍處於放大狀態。
- The currents of the detectors at no bias voltage and reverse bias voltage of 2V were obtained when they were illuminated by light beams of 362nm and 368nm scanning across the active region of the detectors, respectively. 分別用362nm和368nm光束對有源區進行橫向掃描,得到了光照不同部位時探測器在無偏壓、2V反向偏壓下的電流。
- For Au/Ge-Si02/p-Si andAu/Si-SiO,/p-Si structures, they emit EL peaked at 5lOnm when forward biaseswere greater than 6V and 6.5V, respectively, while no detectable lightemission can be observed under reverse bias. 對於Au/Ge-SiO_2/p-Si和Au/Si-SiO_2/p-Si結構,當所加正向偏壓分別高於6V和6.;5V時都發出肉眼可見的EL,峰位均在510nm處; 在反向偏壓下,沒有光發出。
- The formula for calculating the effective impurity concentration in the abrupt junction, the linearly graded junction and the random junction is deduced by using the capacity characteristics obtained when the reverse bias are applied to the p-n junction. 利用pn結反向偏壓時的電容特性推導了有效雜質濃度隨深度分佈的計算公式及突變結和線性緩變結的1/(C2)-V和1/(C3)-V關係圖。
- Secondly, the SiGe-based BiCMOS light emitting device is used as photo detector, when a reverse bias is applied. Photo currents are measured and the photo detecting characteristics are studied. 第二部分則利用設計之矽鍺基金氧半元件逆向操作,以光照產生光電流,觀察其作為光偵測器的特性。
- He devises a new type of transistor. 他發明了一種新的晶體管。
- Zero adjustment function,forward adjust is forward biased,reverse adjust is reverse biased. 零點調整功能,順時針調整可以偏負,逆時針調整可以偏正。
- The old man always carries about a transistor. 這位老人總是隨身攜帶一台晶體管收音機。
- D1 is a protection diode that prevents the be junction of Q2 from be reverse biased. 如果僅僅是為了保護,完全可以在Q2發射極串聯一個二極體代替,
- Typical stressing like under the E-B reverse biasing results in some traps near the E-B spacer oxide and interface states in EB junctions. 傳統的反向偏壓射極-基極接面驅迫所造成的熱載子會在靠近基極和射極接面以及隔離基極-射極的絕緣層上產生接面陷阱(traps)和帶電荷的接面能態(interfacestate),而影響其直流特性上的電性反應。
- The committee is of a/has a conservative bias. 委員會有一種保守的偏見。
- He has a bias against Japanese products. 他討厭日本的產品。