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- The input threshold voltage when the input voltage is falling. 在輸入電壓下降時的輸入門限電壓。
- JEDEC ? The input threshold voltage when the input voltage is falling. 在輸入電壓下降時的輸入門限電壓。
- Then, an implicit expression for electron density and a closed form of threshold voltage are presented fully comprising quantum mechanical (QM) effects. 給出了電子密度的隱式表達式和閾電壓的顯式表達式,它們都充分考慮了量子力學效應。
- At the other hand, we can avoid the threshold voltage loss by taking PMOS transistors as switch transistors. 由於採用PMOS管作為開關管,傳輸過程中避免了閾值電壓損失。
- The tests show that RTV can obviously improve the threshold voltage of secondary discharge. 實驗表明RTV膠明顯提高了高壓陣二次放電閾值電壓;
- A threshold voltage model of the short channel DMOS (Double-Diffusion Metal-Oxide- Semiconductor) is proposed. 該文提出了短溝DMOS閾值電壓模型。
- The optics characteristics of TN-PDLC mode were superior to others.It has lower threshold voltage and driving voltage. 我們發現在高分子分散的情況下,TN-PDLC的模式無論在穿透、對比與反射等光學特性上都優於其它兩者,並且具有較低的閥電壓與驅動電壓。
- A continuous input pulse train triggers the monostable circuit, and a control signal modulates the threshold voltage. 持續不斷的脈衝輸入,導致單穩態的電路產生, 同時控制信號調整門限電壓。
- Key words: comparators; adjustable threshold voltage; synchronous rectification; reverse currents. 關鍵詞:比較器;閾值可變;同步整流器;輸出反向電流
- A preliminary experimental study of a G-M counter under an additional RF vol-tage and a theoretical analysis of the Geiger threshold voltage under this conditionare presented. 本文報告了附加射頻電壓時蓋格計數管的初步實驗研究和蓋格閾壓的理論分析.
- The results of the threshold voltage model agree well with those of the experiment, and those of the 2-D simulator MEDICI. 藉助二維模擬器MEDICI給出微米和深亞微米DMOS閾值電壓的數值解,結果表明,解析值與實驗結果和數值解吻合。
- This model can be applied to simulate the threshold voltage, current-voltage and C-V characteristics of Si/SiGe-p-MOSFET in LSI simulation. 在大規模集成電路設計中該模型可用於模擬預測SiGe-p-MOSFET的閾值電壓、電流-電壓及電容-電壓特性。
- The simula-tion shows that the expression of threshold voltage for SOI structure,using depletion ap-proximation,is very simple and more accurate. 模擬計算還表明;對於薄硅膜的SOI結構;用耗盡層近似推出的閾電壓公式是一個簡單和比較準確的公式.
- An example which uses the simulator to analysis the siatistical relation of threshold voltage of MOSFET to channel implanted dose is presented. 並用此程序分析了MOS場效應管閾值電壓與溝道注人劑量的統計關係。
- Going back to the clipping diodes now, the diodes have no effect until the signal at the output is greater than the threshold voltage of the diode. 回到剪輯二極體現在;二極體沒有影響到信號輸出大於閾電壓的二極體.
- Its function is to provide a latching switch action upon sensing an input threshold voltage, with reset accom-plished by an external clock signal. 它的功能是當感應到輸入電壓界限時提供一個鎖存開關,通過外部時鐘信號完成複位。
- Then,an implicit expression for electron density and a closed form of threshold voltage are presented fully comprising quantum mechanical (QM) effects. 給出了電子密度的隱式表達式和閾電壓的顯式表達式;它們都充分考慮了量子力學效應.
- This experimental observation can be explained by the change of threshold voltage, transconductance, subthreshold swing, and mobility under HC stress. 這可以由金氧半場效電晶體在受到熱載子效應后其臨界電壓,次臨界擺幅,電子遷移率的變化來解釋。
- Sales have now reached a plateau. 銷售現已開始停滯不前。
- The analytical solutions to 1D Schr?dinger equation (in depth direction) in double-gate (DG) MOSFETs are derived to calculate electron density and threshold voltage. 摘要推導了雙柵MOSFET器件在深度方向上薛定諤方程的解析解以求得電子密度和閾電壓。