A method of manufacturing a flash memory device that prevents generation of voids when forming an interlayer dielectric film. 一種製造閃速存儲器件的方法，其防止在形成層間介電薄膜時產生空隙。
This leads to gradual memory exhaustion. 這將導致存儲空間逐漸的耗盡。
The memory cells may be multistate memory cells. 該存儲單元可以是多狀態存儲單元。
Each node has its own memory pool. 每個節點有其自己的存儲器組。
A term sometimes applied to recirculating memory. 有時用於循環存儲器的一種術語。
