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- Ingot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut. 晶錠-由多晶或單晶形成的圓柱體,晶圓片由此切割而成。
- Solar cell components, the use of single crystal silicon and polysilicon and amorphous silicon solar cells monomer. 太陽能電池組件,採用單晶硅和多晶硅及非晶硅太陽能電池單體。
- The morphology evolution of single crystal silicon wafers in the hydrothermal process was investigated. 詳細研究了鐵鈍化多孔矽水熱製備過程中單晶矽片表面的形貌演化。
- This shows that the impact ionizationeffect increasewith the decreasing of silicon film thickness. 這說明,隨著硅膜厚度的減小,器件內部的碰撞離化效應增加。
- A kind of flexible glass capillary wool degras column modified by silicon film was researched. 本文研究了一種硅膜改性彈性玻璃毛細管羊毛脂色譜柱。
- Differing from these general photovoltaics which traditionally chose the crystal silicon as its prime material, TFPV canbe working in the weak light. 與許多常規的光伏採用結晶硅不同,TFPV能在弱光條件下工作。
- The diamond turning surface of single crystal silicon and germanium appears distribution feature alternate with brightness and darkness. 單晶硅、鍺的超精密車削表面存在明暗相間的分佈特徵。
- Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer. 頂部硅膜-生產半導體電路的硅層,位於絕緣層頂部。
- Diamond like carbon (DLC) films on single crystal silicon and other substrats were produced by low energy ion beam deposition. 研究了利用低能離子束技術,在單晶矽片等多種基體表面形成類金剛石薄膜(DLC膜)。
- Thickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer. 頂部硅膜厚度-頂部硅層表面和氧化層表面間的距離。
- Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer. 底部硅層-在絕緣層下部的晶圓片,是頂部硅層的基礎。
- By the double-level recombination model,the statistics formulas of the deep level and lifetime are derived for neutron-irradiated single crystal silicon. 由雙能級複合理論,推導了中子輻照單晶硅的深能級複合中心和壽命的計算公式;
- Several amorphic carbon films with different thickness were deposited on single crystal silicon by means of pulse laser ablating graphet target at room temprature. 在室溫下,用激光燒蝕石墨靶方法在單晶硅襯底表面沉積了不同厚度的非晶碳膜。
- The processing parameters for manufacturing amorphous silicon film were studied.The polycrystalline silicon film was obtained by annealing the amorphous silicon film. 研究了製備性能優良非晶硅薄膜的工藝參數,對薄膜進行高溫退火得到多晶硅薄膜。
- In this report, the porous silicon formed by anodization of crystal silicon was studied by positron annihilation technique (PAT) and scanning electron microscopy (SEM). 用正電子湮沒技術和掃描電子顯微鏡研究了陽極氧化法製備的多孔硅材料。
- With various reaction time, silicon film thickness and adhesion layer, we measured the resistivity, adhesion and grain size.Meanwhile, we fabricated the poly-silicon/Ta/SiO2/Si structure. 其次我們以置換法沈積銅種子層,研究在不同置換時間、矽膜厚度及附著層,其電阻率、附著力、結晶晶相及晶粒大小。
- Many experimental phenomena show that the primary Si content affects the primary crystal silicon distribution in hypereutectic Al-Si alloy functionally gradient matrial (FGM) prepared by centrifugal casting. 很多實驗表明,Si含量不同導致離心法製備過共晶Al-Si合金梯度功能材料(FGM)中初晶硅分佈內外側不同。
- The wear mechanisms of monocrystalline diamond cutting tool in ultra-precision single point diamond turning of aluminum alloy, OFHC copper and single crystal silicon were investigated by carrying out single point diamond turning test. 通過金剛石單點切削試驗 ,考察了對無氧銅、鋁合金和單晶硅進行超精密單點切削時金剛石刀具的磨損行為 ;
- Every series breed specification , high efficiency solar energy producing single crystal silicon , polycrystal silicon and amorphous silicon vanquish the large-scale module and chip only. 生產單晶硅、多晶硅和非晶硅各系列品種規格、高效率的太陽能光伏大型組件及微型組件。