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- The quality of buffer layer and thin films was analyzed by AFM, XRD, RHEED and XPS respectively. 採用原子力顯微鏡(AFM)、X射線衍射(XRD)、反射高能電子衍射(RHEED)和X射線光電子能譜(XPS)等表徵方法,對碳化層的質量和3C-SiC薄膜的結構進行了表徵。
- By simulation, we found that there is a hetero-junction between Silicon buffer layer and Si/SiGe MQW structure. 從實驗的數據得知,在室溫下,樣品的矽發光強度隨著注入電流的增加而有顯著的增強;
- The product is separated from the principle of suction by the absorption layer, a buffer layer, integrated sound insulation layer formed. 該產品採用外隔內吸的原理,由吸聲層,緩衝層,隔聲層綜合而成。
- The reason is not made clear yet, but these results suggest that HVPE growth or an MN high temperature buffer layer gives a better quality GaN. 目前,其原因尚不清楚,但是這些結果表明採用HVPE生長方法或用一高溫AlN阻擋層可以得到高質量的GaN。
- We characterized the films through RHEED and AFM and found the buffer layer reduced the mismatch and improved the quality of ZnO films greatly. 通過室溫光致發光(PL)譜的測試分析,發現L-MBE生長過程中氧壓對ZnO薄膜的結構缺陷濃度有很大影響。
- A simple model is presented to discuss the effect of ultra-thin buffer layer on the generation of misfit dislocations and strain relaxation in strained heterostructures. 摘要用一個簡單模型討論了應變異質結構中嵌入中間層對界面失配位錯產生和應變釋放的影響。
- Investigation of Quantum Well Lasers which Have Superlattice Buffer Layers[J]. 引用該論文 張福厚;宋珂;邢建平;郝修田;曾一平.
- Six Holstein cows were used to study the effect of premix and compound buffers on milk production and milk composition. 試驗一用六頭荷斯坦奶牛研究了添加預混料和複合緩衝劑對奶牛產奶量和乳脂構成的影響。
- Then we use Si wafer as substrate to grow InN QDs, and then AlN buffer layer will grow under high temperature(about 1050 oC) onto substrate, finally, InN QDs will grow internally onto buffer layer. 以單晶矽晶圓做為成長氮化銦量子點之基板,接著在高溫下(約1050度C)成長氮化鋁緩衝層,最後用間歇性的方式成長氮化銦量子點。
- Adjacent switchgears are isolated by its self side board, after putting the switchgears together, air buffer layer exist yet, it may prevent the switchgears from pronging and melted by electric arc. 相鄰的開關櫃由各自的側板隔開,拼櫃后仍有空氣緩衝層,可以防止開關櫃被故障電弧貫穿熔化。
- The results show that the introduction of a buffer layer structure of the GCT can adjust blocking characteristic and on-state characteristic well, and optimize the integrated characteristic of GCT. 模擬結果表明,引入緩衝層的GCT結構能夠很好地調節阻斷特性和通態特性,使GCT的綜合特性得以優化。
- We find a reduction in TD density in GaN films grown on graded AlxGa1-xN buffer layers, in comparison with those grown directly on a thin AlN buffer layer. 與那些直接生長在AlN薄膜上的GaN薄膜相比,生長在組分漸變的AlxGa1-xN 緩衝層上的GaN薄膜內具有更少的螺位錯密度。
- Growth of transitional buffer layers may improve the interfacial lattice mismatch,which decreases the adhesion. 膜/基界面之間不匹配將使附著力下降,可通過設置過渡層(梯度層)的方式加以解決。
- In the experiment, GaN buffer layers have been deposited on substrates with a nitrogen plasma as a nitrogen source and TEG as a Ga source. 實驗過程中,以氮等離子體為氮源,以三乙基鎵(TEG)鎵源,在藍寶石(Al_2O_3)襯底上生長GaN緩衝層。
- The CeO_2 and Y_2O_3 buffer layers were deposited on the cube textured metallic Ni substrates by using reactive magnetron sputtering. 採用反應濺射的方法在具有立方織構的Ni基底上製備了CeO2,Y2O3緩衝層。
- Hence, we deposited 7.5nm and 15nm LT-AlN as buffer layers on two samples, trying to make improvement on lattice quality. 因此,我們將兩個試片分別鍍上7.;5奈米及15奈米厚度的氮化鋁作為緩衝層,看看是否能對於晶體品質上有實質上的幫助。
- Higher growth temperature of buffer layers can lead to more strongly photoluminescence intensity. b) Effects of treatment processes. 光譜測試表明緩衝層生長溫度越高,光致發光強度越強;
- A buffer in a drum used to temporarily store data. 磁鼓中用來暫時存放數據的一種緩衝區。
- Oxygen enters into many compound bodies. 氧是許多化合物的組成部分。
- It was found that there exist many nanometer-sized holes on the surface of SiN buffer layers, and such porous SiN layers probably could enhance the lateral growth. 在氮化矽緩衝層表面可以發現許多奈米尺寸大小的孔洞,其特性相信可提升之後氮化鎵側向的磊晶成長。