Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

 
  • 利用次臨界伏安特性測定由於氧化空穴和界面性能產生的電離輻射感生金屬氧化物半導體場應晶體管臨界電壓偏移分量的試驗方法
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目錄 附錄 查詞歷史