Application of Secondary Ion Mass Spectrometry and Spreading Resistance Probe Technique for Measuring Depth Profile of Boron Implanted in Silicon and Estimation of Resolution of Spreading Resistance Probe Technique

 
  • 用二次離子質譜和擴展電阻探針技術測量硅中注入硼的深度分佈及擴展電阻探針技術解析度的估算
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