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- 深亞微米pMOS器件deep submicron pMOSFET' s
- 深亞微米器件Deep submicron device
- 考慮界面態電荷高斯分佈模型以及Poole-Frenkel效應,對SiC MOSFET補償電流源模型進行了修正,分析了造成6H-SiC NMOS與PMOS器件補償電流源變化的原因.The analytical model which comprises the temperature compensation for the SiC MOSFET is modified by considering the Gauss model of interface state density and the Poole-Frenkel effect.
- 動態電子束探針檢測技術在亞微米和深亞微米IC失效分析中的應用研究Study of dynamic electron-beam probe techniques in submicron and deep submicron IC
- 深亞微米槽柵PMOSFET幾何結構參數對抗熱載流子特性的影響INFLUENCE OF GEOMETRICAL STRUCTURE PARAMETERS ON HOT-CARRIER-EFFECT IN DEEP-SUBMICRON GROOVED GATE PMOSFET
- 人工神經網路在解深亞微米MOSFETs反型層量子效應模型中的應用Solving a Model of Inversion Layer Quantization Effects in Deep Submicron MOSFETs with Artificial Neural Networks
- 一種基於靈敏放大器的新型觸發器及其通過偽PMOS動態技術的速度改進Novel General-Purpose Sense Amplifier-Based Flip-Flop and Its Further Speed Improvement by Pseudo-PMOS Dynamic Technique
- 賓夕法尼亞Pennsylvania
- 當工藝水平發展到深亞微米級,互連線時延比重已經佔據總時延的絕大部分。As the technology proceeds to DSM, the delay of interconnect has been the dominant portion in all delays.
- 歐亞大陸Eurasia
- 深亞微米槽柵NMOSFET結構參數對其抗熱載流子特性的影響Study on the Influence for Structure Parameters on the Hot-Carrier-Effect Immunity in NMOSFET
- 用可見激光在聚(氨酯-醯亞胺)表面製備周期性亞微米結構Preparation of Periodic Sub-micrometer Structure by Visible Laser on Poly(urethane-imide) Surface
- 亞微米PYXSubmicron PYX
- 亞微米直徑光纖Submicro-diameter optical fiber
- W亞微米管加熱電極W sub-micron tube
- 亞微米SiCp/Al基複合材料Sub-micrometer SiCp/Al composites
- 迎接亞微米技術時代的到來Greet the Advent of the Era of Sabmicron Technology
- 三氧化鉬亞微米帶的製備與表徵PREPARATION AND CHARACTERIZATION OF MOLYBDENUM TRIOXIDE SUB-MICROBELTS
- 類球形亞微米碳化硅粉體的製備PREPARATION OF SPHERE-LIKE SUBMICRON SILICON CARBIDE POWDER
- 亞微米級NiS空心球的水熱法合成Preparation of hollow NiS submicrometer spheres by hydrothermal method