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- As an example, Schottky barrier diode characteristics is simulated using this method. 以肖特基势垒二极管为例，应用该方法，实现了高接触势垒情形下的正反向电流模拟。
- The electron beam induced current (EBIC) character of palladium silicide-silicon (P-type)Schottky Barrier Diode (SBD) is observed. 本文用EBIC法对SBD元件进行了观测。
- In the way of MOS taking place of the Fast recovery diode and the Schottky barrier diode, it can cut down on-resistance and reduce the rectification loss. 同步整流技术采用低导通电阻的MOS管代替导通压降相对较大的快恢复二极管或肖特基二极管,大大减小了输出整流损耗,效率相对提高。
- The interface property of palladium silicide-silicon (P-type) Schottky Barrier Diode (SBD)has been studied by AES spectrum and EBIC image. The thickness of Pd_x Si_y layer and the deepness of schottky "junction" are estimated. 对硅化钯-P型硅肖特基势垒二极管(SBD)的界面性质作了AES谱和EBIC像分析,估算了Pd_xSi_y层厚度和肖特基结的结深。
- Preparation of ZnO Thin Film Schottky Barrier Diode ZnO薄膜肖特基二极管的研制
- SiC-Based Schottky Barrier Diode SiC肖特基势垒二极管
- Schottky barrier diode rectifier 肖特基势垒二极管整流器
- The advantage of low resistivity of TiSi 2 makes Ti beneficial to be used to fabricate Schottky barrier diodes(SBD). 基于 Ti Si2 低电阻率的优点 ,采用 Ti制作肖特基二极管。
- Using Schottky barrier diodes for D1 and D2 rather than common diodes reduces the low-level voltage on the bus, improving the noise margin. 使用肖特基二极管D1和D2，而不是普通二极管，为的是减少总线上低状态电压，改进噪声极限。
- Research on Guard Ring Structure of Schottky Barrier Diode 肖特基二极管保护环结构的研究
- AVALANCHE NOISE SOURCE OF SCHOTTKY BARRIER DIODE IN THE 3 mm BAND 3mm肖特基势垒二极管雪崩噪声源
- Schottky barrier diode clamped transistor-transistor logic 肖特基势垒二极管箝位晶体管-晶体管逻辑
- which is a schottky barrier diode with a current rating of 0.2A. 我有一个零件编号BAT54WC这是一个有0.;2A的额定电流肖特基二极管。
- Poor health may be a barrier to success. 健康欠佳可能成为取得成功的障碍。
- The horse took the barrier easily. 那匹马轻松地越过了障碍。
- The circuit is composed of four doubler circuits using four Schottky barrier diodes (HP-HSMS-8102). A RF-to-DC conversion efficiency of 45.4% has been achieved at an input power level of 24.5 dBm with 300W DC load. 本文设计的整流装置采用四个HP-HSMS-8102肖特基二极管组成四个并联的倍压电路;在24.;5 dBm输入功率下(直流负载为300W)测得其整流效率达到了45
- Based on the thermionic emission theory of the current density of 4H-SiC Schottky barrier diodes under the forward bias, the calculations for the Schottky barrier height ? eff and the specific on-resistance R on are presented. 在分析 4H SiC肖特基势垒二极管正向电流热电子发射理论的基础上 ;计算了肖特基势垒高度?eff和串联电阻Ron.
- He have get over the language barrier. 他已克服了语言障碍。
- A large crowd crushed past (the barrier). 大群的人挤过了(障碍物).
- The crowd linked arms to form a barrier. 群众臂挽著臂组成人墙。
