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- band structure model 带状结构模型
- Investigations of Semiconductor Band Structure Using High Pressure. 应用高压对半导体键联结构的研究。
- The main research object of the paper is BCT structure model. 本文主要研究的是BCT结构模型。
- Stir cylinder liner for the band structure, mixer body is long life. 搅拌筒为带衬板结构,搅拌机架体使用寿命长。
- This program calculates the 2D photonic Band Structure with PWE method. (译):此程序计算了二维光子带结构PWE方法。
- Two Dimensional Photonic Band Structure: Triangular Non Bravais Lattice[J]. 引用该论文 金崇君;秦柏;杨森;秦汝虎.
- This paper analyzes the carrier non local transport model of small size semiconductor devices and studies the influences of nonsymmetrical band structure and heterogeneous effect on emphasis. 系统分析了小尺寸半导体器件中的载流子非本地输运模型;重点研究了非均匀能带结构和异质结效应对输运电流密度的影响.
- The structure model P-type K2CsSb + intrinsic Cs3Sb have been proposed. 提出了P型K_2CsSb+本征Cs_3Sb的结构模型。
- The Distributed Multi-tier Structure Model and MIDAS are introduced briefly. 简要介绍了分布式多层体系结构模型及MIDAS。
- Calculated energy band structures show that the single-trimer model has a semiconducting surface and Tri-Ad model has a metallic one. 计算的电子结构表明single-trimer模型的表面是半导体性的而之前的Tri-Ad模型的表面是金属性的。
- In the band structure, one band that is completely filled with electrons is termed valence band. 在能带结构中,完全填满电子的带被称为价带。
- Wave vector resolved surface densities of states and band structure along the surface Brillouin zone are presented. 采用层轨道表象及表面投影技术 ;给出了 (313)表面在二维布里渊区高对称点的波矢分辩的电子态密度和表面投影能带结构 .
- At the same time, the structural model of glass is diss-cussed. 同时探讨了玻璃的结构模型。
- Chuang. This kind band structure can be chose n as an active layer of 980nm pump lase r for optical com -munications. Chuang提出的传递矩阵法,计算了量子阱中不同Ga组分的GaxIn1-xAs/GaInAsP应变量子阱结构的能带,该结构可被选作980nm光通信泵浦激光器的有源层。
- With use of this structure model, we can simulate the real performance of aerofoil very well. 应用该结构模型可以很好的模拟机翼结构的实际情况。
- Band structure, transmissions and reflections are calculated which indicate the Brewster angle phenomenon. 首先研究了一维台阶体系的能带、透射及反射,指出液体表面波中布儒斯特角的存在是难以实现全方位反射的原因。
- Band structure of the photonic crystals shows that there exists a partial bandgap. 通过分析这种光子晶体的能带结构,显示其存在部分带隙。
- Plausible structure model ofelectron capture center and catalytic mechanism were proposed. 讨论了可能的结构模型和催化机理。
- The band structure reveals the form of the impurity levels due to the substitutional impurity in semiconductors. 掺杂模型的能带结构显示,由于在半导体母体中进行杂质原子取代而形成了杂质能级。
- The Krogh-Moe and Abe structural model of borate glasses are discussed. 探讨了Krogh-Moe和Abe硼酸盐玻璃结构模型的某些不足之处。
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