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- The simulation of the Auger electron emissions in scanning probe electron energy spectrometer (SPEES) is reported. 报道了对扫描探针电子能谱仪(SPEES)中俄歇电子出射的理论模拟研究。
- Auger Electron Energies and Their Absolute Intensities Calculations Associated With Internal Conversion Electron Emission 伴随内转换电子发射的俄歇电子能量及强度计算
- auger electron emission 俄歇电子发射
- Some fundamental aspects of Auger electron spectroscopy have been reviewed. 介绍了俄歇电子谱术的某些基本问题。
- Raman, Auger Electron Spectroscopy (AES) and X ray Photoelectron Spectroscopy (XPS) were used to analyze the samples. 用拉曼谱 (Raman)、俄歇电子能谱 (AES)以及X射线光电子能谱(XPS)等方法对样品进行研究。
- The hydrogen in the gauge is ionized by electron emission from a heated cathode. 在离子计内的氢气是用一个加热阴极放射电子来电离的。
- Survival analysis of C6 glioma DNA-targeting radio-therapy by Auger electron emitted from~(125)Iudr in rats. ~(125)IUdR对胶质瘤细胞靶点放疗后的大鼠生存分析
- GaAs-Al_xGa_(1-x)As heterostructure grown by liquid phase epitaxy (LPE) has beenstudied by Auger electron spectroscope. 采用俄歇电子能谱仪(AES)对液相外延生长的GaAs-AlxGa_(1-x)As异质结构进行了研究.
- Experimental results show that CP can effectively activate such FEC's for electron emission. 实验结果表明,CP能有效激活长时间存放于恶劣环境的FEC的电子发射;
- The Ge mole fraction of 15-16% was determined by Auger electron spectroscopy (AES). 俄歇电子谱(AES)测试表明,所制备的Si_(1-x)Ge_x中Ge含量约为15-16%25。
- The molecular effect [R(Yf)] in the forward electron emission decreases with target thickness at a certain energy. 前向发射产额的分子效应R(Yf),在给定的能量下随靶厚增加而下降。
- Preparation and field electron emission of diamond films grown on porous silicon substrates by MW-CVD are studied. 研究了多孔硅衬底微波CVD金刚石薄膜的制备工艺及其场电子发射特性。
- The change of Si/Au interface at the Au-modified Si photoelectrode before and after potential sweep was studied with Auger Electron Spectroscopy (AES). 本文报道了用离子剥层俄歇能谱研究Au修饰Si光电极电位扫描前后Si/Au界面的变化。
- A twodimensional model was used to simulate the processes of electron emission and beam transportation. 建立了二维数字模型,并对注入器的电子发射和束流传输过程进行模拟,模拟结果指导了实验调试。
- The experiments were performed by means of Secondary Ion Mass Spectroscopy (SIMS) and Auger Electron Spectroscopy (AES). 采用了二次离子质谱仪(SIMS)和俄歇电子谱仪(AES)进行表面分析。
- Numberical smiulation is made.Its result is agreement with that of field electron emission experiment. 当考虑到发射体表面的原子级不平整对电场的影响时,利用公式计算的结果与实验结果基本符合。
- The interface diffusion phenomena of BTO/Si were systematically studied by Auger electron spectroscopy(AES) and X-ray photoelectron spectroscopy(XPS). 通过俄歇电子能谱(AES),X光电子能谱(XPS)等分析手段系统研究了在Si基片上直接生长BTO铁电薄膜过程中的界面扩散现象。
- Some results of quantitative analysis, including depth quantitative analysis, on Model JAMP-10 Auger Electron Mieroprobc are given. 给出了利用JAMP-10型俄歇电子谱仪进行定量分析(包括深度定量分析)的一些结果。
- Abstract: In this paper, the beam dynamics in micro-pulse electron gun (MPG) is studied using SEEG (Secondary Electron Emission Gun) program. 摘 要: 利用SEEG程序模拟计算了微脉冲电子枪束流动力学问题。
- Objective To calculate the mean absorbed doses at celluar and subcellular levels for uniformly and non-uniformly distributed Auger electron emitters. 目的给出一种新的方法,计算俄歇电子发射核素在细胞中均匀分布和非均匀分布时细胞和细胞核的平均吸收剂量以及吸收剂量在细胞内的分布。
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