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- active layer thin films 活性层薄膜
- The Effects of Active Layer Thickness on the Characteristics of Amorphous Silicon Thin Film Transistors 有源层厚度对非晶硅薄膜晶体管特性的影响
- Numerical Analysis of Fifth-degree Polynomial Elliptic Equation for the Single Layer Thin Film 单层薄膜的五次多项式椭偏方程的数值分析
- Suzhou NSG AFC THIN FILMS ELECTRONICS CO., LTD. 苏州美日薄膜电子有限公司。
- The CMR effect of the thin films was investigated . 研究了La_(1-x)Te_xMnO_3薄膜的CMR效应。
- Nanocomposite thin films PT/PEK-C were prepared. 制备了纳米复合材料薄膜PT/PEK-C。
- Second, and more importantly, it causes a thin and very active layer of algae, plankton, bacteria, and other forms of life to develop on the surface of the sandbed. 其次,最重要的是,它形成了一个很薄并且很活跃的层,这个层是由藻类、浮游生物、细菌以及其他能够在沙子表面繁衍的生命形式。
- Abbreviation of Thin Film Transistor. 薄膜晶体三极管的缩写。
- A thin film formed on the surface of the pulp. 纸浆表面结了一层膜。
- Thawing and refreezing each year, an active layer of soil lies over permafrost. 覆盖在永冻层上方的一层活冻层土壤,每年都会融化和重新冻结。
- The quality of buffer layer and thin films was analyzed by AFM, XRD, RHEED and XPS respectively. 采用原子力显微镜(AFM)、X射线衍射(XRD)、反射高能电子衍射(RHEED)和X射线光电子能谱(XPS)等表征方法,对碳化层的质量和3C-SiC薄膜的结构进行了表征。
- BCN thin films were grown by RF reactive sputtering. 用射频反应溅射法制备出 BCN薄膜 .
- The morphology of SnO2: Sb thin films was researched by AFM. 采用AFM分析了SnO_2:Sb的表面形貌。
- The Eraser tool uses brushes of various sizes and softnesses to erase pixel information from the active layer. 橡皮擦工具使用了各种大小和硬度的笔刷,来擦去活动图层的像素信息。
- Eroding of lead zirconate titanate (PZT) thin films[J]. 引用该论文 蔡长龙;李明;马卫红;刘卫国.
- These devices have optical waveguide structure, moderate doping level and active layer thickness. 该器件带有光波导结构并具有适当掺杂和有源层厚度。
- Applications of VO2 thin films on laser protection[J]. 引用该论文 宁永刚;孙晓泉.
- Using steady state rate equations,closed form solutions for carrier density in the active layer is deduced. 利用稳态速率方程 ,导出了激光器有源区载流子密度与偏置电流及输入信号光功率关系的隐函数表达式。
- Z. KNITTL “Optics of Thin Films” Taipei : [s.n.], [c1976]. 李正中“薄膜光学与镀膜技术”艺轩图书出版社;2001.;1;第二版
- Chuang. This kind band structure can be chose n as an active layer of 980nm pump lase r for optical com -munications. Chuang提出的传递矩阵法,计算了量子阱中不同Ga组分的GaxIn1-xAs/GaInAsP应变量子阱结构的能带,该结构可被选作980nm光通信泵浦激光器的有源层。