With the well lithography process changing from I-line to DUV process, the well lithography process is under good control, and then improves the STI isolation performance.

• 我们发现阱的曝光制程对浅沟道隔离的影响越来越大，通过把阱的曝光制程从原来的I-line制程换为DUV制程，使阱的曝光制程得到了很好的控制，提高了浅沟道隔离的性能。