We test the characteristic of the circuits and single transistors after the process experiment, the test results indicate the BCD process is successful and the component circuits and LDMOS operate well.

• 工艺实验后进行了正式的芯片流片并完成了功能电路和单管性能的测试,测试结果表明器件和电路参数基本满足设计指标,说明该高压BCD工艺是成功的,电路与器件也符合设计要求。