We studied properties of GaN-based Schottkey barrier Static Induction Transistor(SIT) by the full-band ensemble Monte Carlo approach. The distributions of the electric potential,electric field,and electron concentration in SIT are presented.

• 用全带多粒子Monte Carlo模拟方法研究了GaN基肖特基势垒静电感应晶体管(SIT)的特性,给出了器件的电势、电场强度和电子浓度分布的Monte Carlo模拟结果。