We have successfully fabricated and investigated GaAs-based heterostructure field-effect transistors (HFETs) with dilute InGaAsN/InGaAsNSb/InGaAsSb channel layers, respecti....

 
  • 苏科化;微电子工程研究所硕博士班;国立成功大学;博士;2008-07-21
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