We have grown SiGeC alloy with C incorporated substitutionally by RTP/VLP CVD with noh equilibrium growth technique. We used ethylene as source of carbon.

• 以 C2 H4 为 C源、采用快速加热超低压化学气相淀积 (RTP/VL P- CVD)的非平衡生长技术 ,在 Si(10 0 )衬底上生长出具有一定代位式 C含量的硅基 Si Ge C合金。