Two-step an n ealing is favorable to diminish the point defects introduced by ion-implantatio n ,and there exists the best temperature region for recrystallization during the se cond annealing step.

 
  • 采用两步退火方法有利于消除注入引入的点缺陷 ;而二次外延退火存在着一个最佳退火温区 .
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