The uniformity of the thin film transistor fabricated by excimer laser annealing (ELA) of amorphous Si with squarelattice metal (Cr/Al) pads on top has been substantially improved.

• 非晶矽在其上设置金属(铬/铝)正方形周期排列经过雷射退火后，可以有效改善所制成薄膜电晶体之电性均匀度。