The nonisothermal energy balance model (NEB), including the effects o f heterojunctions and lattice heating, is used to model the AlGaAs/GaAs HBT, whi ch is implemented in a 2D device simulator.

• 本文探讨了包含异质结和晶格加热效应下非等温能量平衡模型(NEB),且将其用于AlGaAs/GaAsHBT的数值分析中,并在二维器件模拟器中实现。