The method of claim 21, wherein said film is a uniform film having electrical properties such that said semiconducting devices comprise insulated-gate field-effect transistors.

• 根据权利要求21所述之方法，其中所述薄膜是一层具有电气特性的均匀薄膜，从而所述半导体器件包括绝缘栅场效应晶体管。