The lattice strain of MBE grown CdTe(211)B epilayers on 76mm Si(211) and 76mm GaAs(211)B substrates was studied by reciprocal space maps of high-resolution multi-crystal multi-reflection X-ray diffractmetry(HRMCMRXD).

• 本文利用高分辨率多重晶多重反射X射线衍射技术对分子束外延CdTe(211)B/Si(211)与CdTe(211)B/GaAs(211)B材料的CdTe外延薄膜进行了倒易点二维扫描,并通过获得的倒易点二维图,对CdTe缓冲层的应力和应变状况进行了分析。