The integration of chemical vapor deposited organo-silicate glass (OSG) interlayer dielectrics (ILD) has challenged the IC industry to formulate new methods of metrology and characterization.

• 在化学气相沉积有机矽酸盐玻璃交界层介电质对积体电路工业而言形成度量和特性的新方法是具有挑战性。