The film resistivity was obtained by four point probe.Rutherford backscattering spectrometry (RBS) was utilized to examine the stoichiometry and density of the HfNx films.

• 溅镀氮化铪薄膜时，随基板负偏压增大，薄膜电阻率会降低，但是，随氮气流量比例增大时，薄膜电阻率会增大；