The characterization of WN_x/n-GaAs Schottky barriers prepared by magnetron sputteringis investigated using Auger electron spectrum, Rutherford backscattering spetra, current-voltageand capacitance-voltage measurements.

• 本文用俄歇能谱、卢瑟福背散射、电流-电压和电容-电压等方法研究了射频磁控反应溅射制备的WN_x/n-GaAs肖特基势垒特性。