The characteristic of hydrogenated amorphous silicon(a-Si:H)field effect transistor(FET)is easily affected by environmental factors. Temperature,moisture and exposure would influence its property.

 
  • 氢化非晶硅(a-Si:H)场效应晶体管(FET)的特性对环境因素较为敏感,光照、湿度和温度等都会对其产生影响。
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