The PunchThru process reduces via resistance, improves SM and protects dual-damascene bevel and unlanded vias from Cu diffusion by presence of thin Ta deposition step.

• 阻挡层击穿工艺减少了通孔电阻,提高了应力迁移性能,并通过薄钽沉积工序防止了铜的扩散从而保护了双嵌入斜面和错位通孔。